Memory phototransistors based on exponential-association photoelectric conversion law
CdS nanostructures can enable memory based photodetection by charge-storage accumulative effect. Here, the authors report CdS nanoribbons-based memory phototransistors with high responsivity of 3.8 × 109 A/W and detectivity of 7.7 × 1022 Jones that can detect weak light of 6 nW/cm2.
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/0136493579254a27917b482c0e03e4b7 |
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