Memory phototransistors based on exponential-association photoelectric conversion law

CdS nanostructures can enable memory based photodetection by charge-storage accumulative effect. Here, the authors report CdS nanoribbons-based memory phototransistors with high responsivity of 3.8 × 109 A/W and detectivity of 7.7 × 1022 Jones that can detect weak light of 6 nW/cm2.

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Detalles Bibliográficos
Autores principales:	Zhibin Shao, Tianhao Jiang, Xiujuan Zhang, Xiaohong Zhang, Xiaofeng Wu, Feifei Xia, Shiyun Xiong, Shuit-Tong Lee, Jiansheng Jie
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/0136493579254a27917b482c0e03e4b7
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spelling	oai:doaj.org-article:0136493579254a27917b482c0e03e4b72021-12-02T15:35:04ZMemory phototransistors based on exponential-association photoelectric conversion law10.1038/s41467-019-09206-w2041-1723https://doaj.org/article/0136493579254a27917b482c0e03e4b72019-03-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-09206-whttps://doaj.org/toc/2041-1723CdS nanostructures can enable memory based photodetection by charge-storage accumulative effect. Here, the authors report CdS nanoribbons-based memory phototransistors with high responsivity of 3.8 × 109 A/W and detectivity of 7.7 × 1022 Jones that can detect weak light of 6 nW/cm2.Zhibin ShaoTianhao JiangXiujuan ZhangXiaohong ZhangXiaofeng WuFeifei XiaShiyun XiongShuit-Tong LeeJiansheng JieNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Zhibin Shao Tianhao Jiang Xiujuan Zhang Xiaohong Zhang Xiaofeng Wu Feifei Xia Shiyun Xiong Shuit-Tong Lee Jiansheng Jie Memory phototransistors based on exponential-association photoelectric conversion law
description	CdS nanostructures can enable memory based photodetection by charge-storage accumulative effect. Here, the authors report CdS nanoribbons-based memory phototransistors with high responsivity of 3.8 × 109 A/W and detectivity of 7.7 × 1022 Jones that can detect weak light of 6 nW/cm2.
format	article
author	Zhibin Shao Tianhao Jiang Xiujuan Zhang Xiaohong Zhang Xiaofeng Wu Feifei Xia Shiyun Xiong Shuit-Tong Lee Jiansheng Jie
author_facet	Zhibin Shao Tianhao Jiang Xiujuan Zhang Xiaohong Zhang Xiaofeng Wu Feifei Xia Shiyun Xiong Shuit-Tong Lee Jiansheng Jie
author_sort	Zhibin Shao
title	Memory phototransistors based on exponential-association photoelectric conversion law
title_short	Memory phototransistors based on exponential-association photoelectric conversion law
title_full	Memory phototransistors based on exponential-association photoelectric conversion law
title_fullStr	Memory phototransistors based on exponential-association photoelectric conversion law
title_full_unstemmed	Memory phototransistors based on exponential-association photoelectric conversion law
title_sort	memory phototransistors based on exponential-association photoelectric conversion law
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/0136493579254a27917b482c0e03e4b7
work_keys_str_mv	AT zhibinshao memoryphototransistorsbasedonexponentialassociationphotoelectricconversionlaw AT tianhaojiang memoryphototransistorsbasedonexponentialassociationphotoelectricconversionlaw AT xiujuanzhang memoryphototransistorsbasedonexponentialassociationphotoelectricconversionlaw AT xiaohongzhang memoryphototransistorsbasedonexponentialassociationphotoelectricconversionlaw AT xiaofengwu memoryphototransistorsbasedonexponentialassociationphotoelectricconversionlaw AT feifeixia memoryphototransistorsbasedonexponentialassociationphotoelectricconversionlaw AT shiyunxiong memoryphototransistorsbasedonexponentialassociationphotoelectricconversionlaw AT shuittonglee memoryphototransistorsbasedonexponentialassociationphotoelectricconversionlaw AT jianshengjie memoryphototransistorsbasedonexponentialassociationphotoelectricconversionlaw
_version_	1718386635557568512

Memory phototransistors based on exponential-association photoelectric conversion law

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