The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions

The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions

The undoped polycrystalline diamond films (PDFs) have been deposited on n-type silicon (Si) by Hot Filament Chemical Vapor Deposition (HF CVD) technique. The reaction gases are a mixture of methane and hydrogen. The obtained PDFs were characterized by scanning electron microscopy (SEM) and Raman spe...

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Detalles Bibliográficos
Autores principales: Szymon Łoś, Kazimierz Fabisiak, Kazimierz Paprocki, Mirosław Szybowicz, Anna Dychalska, Ewa Spychaj-Fabisiak, Wojciech Franków
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
CVD diamond
Raman spectroscopy
p-diamond/n-Si heterojunction
SEM
J-V/T characteristic
hydrogenation
Technology
T
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
Acceso en línea:https://doaj.org/article/0263814a2f11418690b5b4cd94585c2c
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https://doaj.org/article/0263814a2f11418690b5b4cd94585c2c

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