The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions
The undoped polycrystalline diamond films (PDFs) have been deposited on n-type silicon (Si) by Hot Filament Chemical Vapor Deposition (HF CVD) technique. The reaction gases are a mixture of methane and hydrogen. The obtained PDFs were characterized by scanning electron microscopy (SEM) and Raman spe...
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2021
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oai:doaj.org-article:0263814a2f11418690b5b4cd94585c2c2021-11-11T18:09:00ZThe Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions10.3390/ma142166151996-1944https://doaj.org/article/0263814a2f11418690b5b4cd94585c2c2021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/21/6615https://doaj.org/toc/1996-1944The undoped polycrystalline diamond films (PDFs) have been deposited on n-type silicon (Si) by Hot Filament Chemical Vapor Deposition (HF CVD) technique. The reaction gases are a mixture of methane and hydrogen. The obtained PDFs were characterized by scanning electron microscopy (SEM) and Raman spectroscopy which, in addition to the diamond phase, also confirms the presence of sp<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mn>2</mn></msup></semantics></math></inline-formula> hybridized carbon bonds. As-grown CVD diamond layers are hydrogen terminated and show p-type conductivity. The effect of the level of hydrogenation on the electrical properties of p-diamond/n-Si heterojunctions has been investigated by temperature dependent current–voltage (J-V/T) characteristics. The obtained results suggest that the energy distribution of interface states at the grain boundary (GB) subjected to hydrogenation becomes shallower, and the hole capture cross-section can be reduced. Hydrogenation can lead to a significant reduction of the GB potential barrier. These results can be interesting from the point of view of hydrogen passivation of GBs in microelectronics.Szymon ŁośKazimierz FabisiakKazimierz PaprockiMirosław SzybowiczAnna DychalskaEwa Spychaj-FabisiakWojciech FrankówMDPI AGarticleCVD diamondRaman spectroscopyp-diamond/n-Si heterojunctionSEMJ-V/T characteristichydrogenationTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6615, p 6615 (2021) |
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| language |
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| topic |
CVD diamond Raman spectroscopy p-diamond/n-Si heterojunction SEM J-V/T characteristic hydrogenation Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 |
| spellingShingle |
CVD diamond Raman spectroscopy p-diamond/n-Si heterojunction SEM J-V/T characteristic hydrogenation Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Szymon Łoś Kazimierz Fabisiak Kazimierz Paprocki Mirosław Szybowicz Anna Dychalska Ewa Spychaj-Fabisiak Wojciech Franków The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions |
| description |
The undoped polycrystalline diamond films (PDFs) have been deposited on n-type silicon (Si) by Hot Filament Chemical Vapor Deposition (HF CVD) technique. The reaction gases are a mixture of methane and hydrogen. The obtained PDFs were characterized by scanning electron microscopy (SEM) and Raman spectroscopy which, in addition to the diamond phase, also confirms the presence of sp<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mn>2</mn></msup></semantics></math></inline-formula> hybridized carbon bonds. As-grown CVD diamond layers are hydrogen terminated and show p-type conductivity. The effect of the level of hydrogenation on the electrical properties of p-diamond/n-Si heterojunctions has been investigated by temperature dependent current–voltage (J-V/T) characteristics. The obtained results suggest that the energy distribution of interface states at the grain boundary (GB) subjected to hydrogenation becomes shallower, and the hole capture cross-section can be reduced. Hydrogenation can lead to a significant reduction of the GB potential barrier. These results can be interesting from the point of view of hydrogen passivation of GBs in microelectronics. |
| format |
article |
| author |
Szymon Łoś Kazimierz Fabisiak Kazimierz Paprocki Mirosław Szybowicz Anna Dychalska Ewa Spychaj-Fabisiak Wojciech Franków |
| author_facet |
Szymon Łoś Kazimierz Fabisiak Kazimierz Paprocki Mirosław Szybowicz Anna Dychalska Ewa Spychaj-Fabisiak Wojciech Franków |
| author_sort |
Szymon Łoś |
| title |
The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions |
| title_short |
The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions |
| title_full |
The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions |
| title_fullStr |
The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions |
| title_full_unstemmed |
The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions |
| title_sort |
hydrogenation impact on electronic properties of p-diamond/n-si heterojunctions |
| publisher |
MDPI AG |
| publishDate |
2021 |
| url |
https://doaj.org/article/0263814a2f11418690b5b4cd94585c2c |
| work_keys_str_mv |
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1718431921930764288 |