The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions

The undoped polycrystalline diamond films (PDFs) have been deposited on n-type silicon (Si) by Hot Filament Chemical Vapor Deposition (HF CVD) technique. The reaction gases are a mixture of methane and hydrogen. The obtained PDFs were characterized by scanning electron microscopy (SEM) and Raman spe...

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Detalles Bibliográficos
Autores principales:	Szymon Łoś, Kazimierz Fabisiak, Kazimierz Paprocki, Mirosław Szybowicz, Anna Dychalska, Ewa Spychaj-Fabisiak, Wojciech Franków
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	CVD diamond Raman spectroscopy p-diamond/n-Si heterojunction SEM J-V/T characteristic hydrogenation Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Acceso en línea:	https://doaj.org/article/0263814a2f11418690b5b4cd94585c2c
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The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions

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