Time-of-flight secondary ion mass spectrometry fragment regularity in gallium-doped zinc oxide thin films

Abstract Time-of-flight secondary ion mass spectrometry fragment analysis remains a challenging task. The fragment appearance regularity (FAR) rule is particularly useful for two-element compounds such as ZnO. Ion fragments appearing in the form of Zn x O y obey the rule $$2x \ge 2y + 1$$ 2 x ≥ 2 y...

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Autores principales:	K. G. Saw, S. R. Esa
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/026519b2eb044c288c5eb4f709df11ee
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spelling	oai:doaj.org-article:026519b2eb044c288c5eb4f709df11ee2021-12-02T14:22:43ZTime-of-flight secondary ion mass spectrometry fragment regularity in gallium-doped zinc oxide thin films10.1038/s41598-021-87386-62045-2322https://doaj.org/article/026519b2eb044c288c5eb4f709df11ee2021-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-87386-6https://doaj.org/toc/2045-2322Abstract Time-of-flight secondary ion mass spectrometry fragment analysis remains a challenging task. The fragment appearance regularity (FAR) rule is particularly useful for two-element compounds such as ZnO. Ion fragments appearing in the form of Zn x O y obey the rule $$2x \ge 2y + 1$$ 2 x ≥ 2 y + 1 in the positive secondary ion spectrum and $$2x \le 2y + 1$$ 2 x ≤ 2 y + 1 in the negative spectrum where the valence of Zn is + 2 and that of O is − 2. Fragment analysis in gallium-doped ZnO (GZO) films can give insights into the bonding of the elements in this important semiconductor. Fragment analysis of 1 and 7 wt% GZO films shows that only the negative ion fragments obey the FAR rule where ZnO‒, 66ZnO‒, 68ZnO‒ and ZnO2 ‒ ion fragments appear. In the positive polarity, subdued peaks from out-of-the-rule ZnO+, 66ZnO+ and 68ZnO+ ion fragments are observed. The Ga ion peaks are present in both the positive and negative spectra. The secondary ion spectra of undoped ZnO also shows consistency with the FAR rule. This implies that Ga doping even in amounts that exceed the ZnO lattice limit of solubility does not affect the compliance with the FAR rule.K. G. SawS. R. EsaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q K. G. Saw S. R. Esa Time-of-flight secondary ion mass spectrometry fragment regularity in gallium-doped zinc oxide thin films
description	Abstract Time-of-flight secondary ion mass spectrometry fragment analysis remains a challenging task. The fragment appearance regularity (FAR) rule is particularly useful for two-element compounds such as ZnO. Ion fragments appearing in the form of Zn x O y obey the rule $$2x \ge 2y + 1$$ 2 x ≥ 2 y + 1 in the positive secondary ion spectrum and $$2x \le 2y + 1$$ 2 x ≤ 2 y + 1 in the negative spectrum where the valence of Zn is + 2 and that of O is − 2. Fragment analysis in gallium-doped ZnO (GZO) films can give insights into the bonding of the elements in this important semiconductor. Fragment analysis of 1 and 7 wt% GZO films shows that only the negative ion fragments obey the FAR rule where ZnO‒, 66ZnO‒, 68ZnO‒ and ZnO2 ‒ ion fragments appear. In the positive polarity, subdued peaks from out-of-the-rule ZnO+, 66ZnO+ and 68ZnO+ ion fragments are observed. The Ga ion peaks are present in both the positive and negative spectra. The secondary ion spectra of undoped ZnO also shows consistency with the FAR rule. This implies that Ga doping even in amounts that exceed the ZnO lattice limit of solubility does not affect the compliance with the FAR rule.
format	article
author	K. G. Saw S. R. Esa
author_facet	K. G. Saw S. R. Esa
author_sort	K. G. Saw
title	Time-of-flight secondary ion mass spectrometry fragment regularity in gallium-doped zinc oxide thin films
title_short	Time-of-flight secondary ion mass spectrometry fragment regularity in gallium-doped zinc oxide thin films
title_full	Time-of-flight secondary ion mass spectrometry fragment regularity in gallium-doped zinc oxide thin films
title_fullStr	Time-of-flight secondary ion mass spectrometry fragment regularity in gallium-doped zinc oxide thin films
title_full_unstemmed	Time-of-flight secondary ion mass spectrometry fragment regularity in gallium-doped zinc oxide thin films
title_sort	time-of-flight secondary ion mass spectrometry fragment regularity in gallium-doped zinc oxide thin films
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/026519b2eb044c288c5eb4f709df11ee
work_keys_str_mv	AT kgsaw timeofflightsecondaryionmassspectrometryfragmentregularityingalliumdopedzincoxidethinfilms AT sresa timeofflightsecondaryionmassspectrometryfragmentregularityingalliumdopedzincoxidethinfilms
_version_	1718391466241294336

Time-of-flight secondary ion mass spectrometry fragment regularity in gallium-doped zinc oxide thin films

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