Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

Utilization of inevitable defect states in 2D materials can enable efficient photodetection and memory applications. Here, the authors report use of defect-induced deep traps to capture and store carriers in exfoliated flakes of MoS2xSe2(1-x) as photodetectors with high responsivity of 2.4 × 105 A/W...

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Auteurs principaux: Lei Yin, Peng He, Ruiqing Cheng, Feng Wang, Fengmei Wang, Zhenxing Wang, Yao Wen, Jun He
Format: article
Langue:EN
Publié: Nature Portfolio 2019
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Accès en ligne:https://doaj.org/article/02705021ecec4a0f921a7924000cf060
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