Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

Utilization of inevitable defect states in 2D materials can enable efficient photodetection and memory applications. Here, the authors report use of defect-induced deep traps to capture and store carriers in exfoliated flakes of MoS2xSe2(1-x) as photodetectors with high responsivity of 2.4 × 105 A/W...

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Autores principales:	Lei Yin, Peng He, Ruiqing Cheng, Feng Wang, Fengmei Wang, Zhenxing Wang, Yao Wen, Jun He
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/02705021ecec4a0f921a7924000cf060
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spelling	oai:doaj.org-article:02705021ecec4a0f921a7924000cf0602021-12-02T17:01:37ZRobust trap effect in transition metal dichalcogenides for advanced multifunctional devices10.1038/s41467-019-12200-x2041-1723https://doaj.org/article/02705021ecec4a0f921a7924000cf0602019-09-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-12200-xhttps://doaj.org/toc/2041-1723Utilization of inevitable defect states in 2D materials can enable efficient photodetection and memory applications. Here, the authors report use of defect-induced deep traps to capture and store carriers in exfoliated flakes of MoS2xSe2(1-x) as photodetectors with high responsivity of 2.4 × 105 A/W at 1550 nm and non-volatile memories with photo-switching ratio of 108.Lei YinPeng HeRuiqing ChengFeng WangFengmei WangZhenxing WangYao WenJun HeNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Lei Yin Peng He Ruiqing Cheng Feng Wang Fengmei Wang Zhenxing Wang Yao Wen Jun He Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices
description	Utilization of inevitable defect states in 2D materials can enable efficient photodetection and memory applications. Here, the authors report use of defect-induced deep traps to capture and store carriers in exfoliated flakes of MoS2xSe2(1-x) as photodetectors with high responsivity of 2.4 × 105 A/W at 1550 nm and non-volatile memories with photo-switching ratio of 108.
format	article
author	Lei Yin Peng He Ruiqing Cheng Feng Wang Fengmei Wang Zhenxing Wang Yao Wen Jun He
author_facet	Lei Yin Peng He Ruiqing Cheng Feng Wang Fengmei Wang Zhenxing Wang Yao Wen Jun He
author_sort	Lei Yin
title	Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices
title_short	Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices
title_full	Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices
title_fullStr	Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices
title_full_unstemmed	Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices
title_sort	robust trap effect in transition metal dichalcogenides for advanced multifunctional devices
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/02705021ecec4a0f921a7924000cf060
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Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

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