Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System

Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System

Abstract Contact property is now becoming to be a key factor for achieving high performance and high reliability in GaN-based III-V semiconductor devices. Energetic ion sputter, as an effective interface probe, is widely used to profile the metal/GaN contacts for interfacial analysis and process opt...

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Autores principales: Rong Huang, Fangsen Li, Tong Liu, Yanfei Zhao, Yafeng Zhu, Yang Shen, Xiaoming Lu, Zengli Huang, Jianping Liu, Liqun Zhang, Shuming Zhang, Zhanping Li, An Dingsun, Hui Yang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
Medicine
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Science
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Acceso en línea:https://doaj.org/article/02c5678d388b4ceabcb9031e76bd7986
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https://doaj.org/article/02c5678d388b4ceabcb9031e76bd7986

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