Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System

Abstract Contact property is now becoming to be a key factor for achieving high performance and high reliability in GaN-based III-V semiconductor devices. Energetic ion sputter, as an effective interface probe, is widely used to profile the metal/GaN contacts for interfacial analysis and process opt...

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Autores principales:	Rong Huang, Fangsen Li, Tong Liu, Yanfei Zhao, Yafeng Zhu, Yang Shen, Xiaoming Lu, Zengli Huang, Jianping Liu, Liqun Zhang, Shuming Zhang, Zhanping Li, An Dingsun, Hui Yang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/02c5678d388b4ceabcb9031e76bd7986
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spelling	oai:doaj.org-article:02c5678d388b4ceabcb9031e76bd79862021-12-02T15:07:59ZIon Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System10.1038/s41598-018-26734-52045-2322https://doaj.org/article/02c5678d388b4ceabcb9031e76bd79862018-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-26734-5https://doaj.org/toc/2045-2322Abstract Contact property is now becoming to be a key factor for achieving high performance and high reliability in GaN-based III-V semiconductor devices. Energetic ion sputter, as an effective interface probe, is widely used to profile the metal/GaN contacts for interfacial analysis and process optimization. However, the details of ion-induced interfacial reaction, as well as the formation of sputter by-products at the interfaces are still unclear. Here by combining state-of-the-art Ar+ ion sputter with in-situ X-ray photoelectron spectroscopy (XPS) and ex-situ high resolution transmission electron microscopy (HRTEM), we have observed clearly not only the ion-induced chemical state changes at interface, but also the by-products at the prototypical Ti/GaN system. For the first time, we identified the formation of a metallic Ga layer at the GaOx/GaN interface. At the Ti/GaOx interface, TiCx components were also detected due to the reaction between metal Ti and surface-adsorbed C species. Our study reveals that the corresponding core level binding energy and peak intensity obtained from ion sputter depth profile should be treated with much caution, since they will be changed due to ion-induced interface reactions and formation of by-products during ion bombardment.Rong HuangFangsen LiTong LiuYanfei ZhaoYafeng ZhuYang ShenXiaoming LuZengli HuangJianping LiuLiqun ZhangShuming ZhangZhanping LiAn DingsunHui YangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-7 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Rong Huang Fangsen Li Tong Liu Yanfei Zhao Yafeng Zhu Yang Shen Xiaoming Lu Zengli Huang Jianping Liu Liqun Zhang Shuming Zhang Zhanping Li An Dingsun Hui Yang Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System
description	Abstract Contact property is now becoming to be a key factor for achieving high performance and high reliability in GaN-based III-V semiconductor devices. Energetic ion sputter, as an effective interface probe, is widely used to profile the metal/GaN contacts for interfacial analysis and process optimization. However, the details of ion-induced interfacial reaction, as well as the formation of sputter by-products at the interfaces are still unclear. Here by combining state-of-the-art Ar+ ion sputter with in-situ X-ray photoelectron spectroscopy (XPS) and ex-situ high resolution transmission electron microscopy (HRTEM), we have observed clearly not only the ion-induced chemical state changes at interface, but also the by-products at the prototypical Ti/GaN system. For the first time, we identified the formation of a metallic Ga layer at the GaOx/GaN interface. At the Ti/GaOx interface, TiCx components were also detected due to the reaction between metal Ti and surface-adsorbed C species. Our study reveals that the corresponding core level binding energy and peak intensity obtained from ion sputter depth profile should be treated with much caution, since they will be changed due to ion-induced interface reactions and formation of by-products during ion bombardment.
format	article
author	Rong Huang Fangsen Li Tong Liu Yanfei Zhao Yafeng Zhu Yang Shen Xiaoming Lu Zengli Huang Jianping Liu Liqun Zhang Shuming Zhang Zhanping Li An Dingsun Hui Yang
author_facet	Rong Huang Fangsen Li Tong Liu Yanfei Zhao Yafeng Zhu Yang Shen Xiaoming Lu Zengli Huang Jianping Liu Liqun Zhang Shuming Zhang Zhanping Li An Dingsun Hui Yang
author_sort	Rong Huang
title	Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System
title_short	Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System
title_full	Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System
title_fullStr	Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System
title_full_unstemmed	Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System
title_sort	ion sputter induced interfacial reaction in prototypical metal-gan system
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/02c5678d388b4ceabcb9031e76bd7986
work_keys_str_mv	AT ronghuang ionsputterinducedinterfacialreactioninprototypicalmetalgansystem AT fangsenli ionsputterinducedinterfacialreactioninprototypicalmetalgansystem AT tongliu ionsputterinducedinterfacialreactioninprototypicalmetalgansystem AT yanfeizhao ionsputterinducedinterfacialreactioninprototypicalmetalgansystem AT yafengzhu ionsputterinducedinterfacialreactioninprototypicalmetalgansystem AT yangshen ionsputterinducedinterfacialreactioninprototypicalmetalgansystem AT xiaominglu ionsputterinducedinterfacialreactioninprototypicalmetalgansystem AT zenglihuang ionsputterinducedinterfacialreactioninprototypicalmetalgansystem AT jianpingliu ionsputterinducedinterfacialreactioninprototypicalmetalgansystem AT liqunzhang ionsputterinducedinterfacialreactioninprototypicalmetalgansystem AT shumingzhang ionsputterinducedinterfacialreactioninprototypicalmetalgansystem AT zhanpingli ionsputterinducedinterfacialreactioninprototypicalmetalgansystem AT andingsun ionsputterinducedinterfacialreactioninprototypicalmetalgansystem AT huiyang ionsputterinducedinterfacialreactioninprototypicalmetalgansystem
_version_	1718388296879439872

Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System

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