Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
Wide-bandgap, metal-oxide thin-film transistors are limited in their application by the lack of available p-type material. Here, the authors demonstrate a wide-bandgap metal-oxide n-type semiconductor that sustains a strong p-type inversion layer using a barrier dielectric with a high-dielectric con...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2016
|
| Subjects: | |
| Online Access: | https://doaj.org/article/033d20f2e4f942ad8d0dd2232ee14cee |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|