Cita APA (7a ed.)

Shoute, G., Afshar, A., Muneshwar, T., Cadien, K., & Barlage, D. (2016). Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current. Nature Portfolio.

Cita Chicago Style (17a ed.)

Shoute, Gem, Amir Afshar, Triratna Muneshwar, Kenneth Cadien, y Douglas Barlage. Sustained Hole Inversion Layer in a Wide-bandgap Metal-oxide Semiconductor with Enhanced Tunnel Current. Nature Portfolio, 2016.

Cita MLA (8a ed.)

Shoute, Gem, et al. Sustained Hole Inversion Layer in a Wide-bandgap Metal-oxide Semiconductor with Enhanced Tunnel Current. Nature Portfolio, 2016.