Shoute, G., Afshar, A., Muneshwar, T., Cadien, K., & Barlage, D. (2016). Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current. Nature Portfolio.
Style de citation Chicago (17e éd.)Shoute, Gem, Amir Afshar, Triratna Muneshwar, Kenneth Cadien, et Douglas Barlage. Sustained Hole Inversion Layer in a Wide-bandgap Metal-oxide Semiconductor with Enhanced Tunnel Current. Nature Portfolio, 2016.
Style de citation MLA (8e éd.)Shoute, Gem, et al. Sustained Hole Inversion Layer in a Wide-bandgap Metal-oxide Semiconductor with Enhanced Tunnel Current. Nature Portfolio, 2016.
Attention : ces citations peuvent ne pas être correctes à 100%.