Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
Wide-bandgap, metal-oxide thin-film transistors are limited in their application by the lack of available p-type material. Here, the authors demonstrate a wide-bandgap metal-oxide n-type semiconductor that sustains a strong p-type inversion layer using a barrier dielectric with a high-dielectric con...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2016
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/033d20f2e4f942ad8d0dd2232ee14cee |
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| Sumario: | Wide-bandgap, metal-oxide thin-film transistors are limited in their application by the lack of available p-type material. Here, the authors demonstrate a wide-bandgap metal-oxide n-type semiconductor that sustains a strong p-type inversion layer using a barrier dielectric with a high-dielectric constant. |
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