Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

Wide-bandgap, metal-oxide thin-film transistors are limited in their application by the lack of available p-type material. Here, the authors demonstrate a wide-bandgap metal-oxide n-type semiconductor that sustains a strong p-type inversion layer using a barrier dielectric with a high-dielectric con...

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Autores principales:	Gem Shoute, Amir Afshar, Triratna Muneshwar, Kenneth Cadien, Douglas Barlage
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/033d20f2e4f942ad8d0dd2232ee14cee
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spelling	oai:doaj.org-article:033d20f2e4f942ad8d0dd2232ee14cee2021-12-02T15:35:19ZSustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current10.1038/ncomms106322041-1723https://doaj.org/article/033d20f2e4f942ad8d0dd2232ee14cee2016-02-01T00:00:00Zhttps://doi.org/10.1038/ncomms10632https://doaj.org/toc/2041-1723Wide-bandgap, metal-oxide thin-film transistors are limited in their application by the lack of available p-type material. Here, the authors demonstrate a wide-bandgap metal-oxide n-type semiconductor that sustains a strong p-type inversion layer using a barrier dielectric with a high-dielectric constant.Gem ShouteAmir AfsharTriratna MuneshwarKenneth CadienDouglas BarlageNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-5 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Gem Shoute Amir Afshar Triratna Muneshwar Kenneth Cadien Douglas Barlage Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
description	Wide-bandgap, metal-oxide thin-film transistors are limited in their application by the lack of available p-type material. Here, the authors demonstrate a wide-bandgap metal-oxide n-type semiconductor that sustains a strong p-type inversion layer using a barrier dielectric with a high-dielectric constant.
format	article
author	Gem Shoute Amir Afshar Triratna Muneshwar Kenneth Cadien Douglas Barlage
author_facet	Gem Shoute Amir Afshar Triratna Muneshwar Kenneth Cadien Douglas Barlage
author_sort	Gem Shoute
title	Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
title_short	Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
title_full	Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
title_fullStr	Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
title_full_unstemmed	Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
title_sort	sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/033d20f2e4f942ad8d0dd2232ee14cee
work_keys_str_mv	AT gemshoute sustainedholeinversionlayerinawidebandgapmetaloxidesemiconductorwithenhancedtunnelcurrent AT amirafshar sustainedholeinversionlayerinawidebandgapmetaloxidesemiconductorwithenhancedtunnelcurrent AT triratnamuneshwar sustainedholeinversionlayerinawidebandgapmetaloxidesemiconductorwithenhancedtunnelcurrent AT kennethcadien sustainedholeinversionlayerinawidebandgapmetaloxidesemiconductorwithenhancedtunnelcurrent AT douglasbarlage sustainedholeinversionlayerinawidebandgapmetaloxidesemiconductorwithenhancedtunnelcurrent
_version_	1718386575305342976

Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

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