Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

Wide-bandgap, metal-oxide thin-film transistors are limited in their application by the lack of available p-type material. Here, the authors demonstrate a wide-bandgap metal-oxide n-type semiconductor that sustains a strong p-type inversion layer using a barrier dielectric with a high-dielectric con...

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Autores principales: Gem Shoute, Amir Afshar, Triratna Muneshwar, Kenneth Cadien, Douglas Barlage
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
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Acceso en línea:https://doaj.org/article/033d20f2e4f942ad8d0dd2232ee14cee
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spelling oai:doaj.org-article:033d20f2e4f942ad8d0dd2232ee14cee2021-12-02T15:35:19ZSustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current10.1038/ncomms106322041-1723https://doaj.org/article/033d20f2e4f942ad8d0dd2232ee14cee2016-02-01T00:00:00Zhttps://doi.org/10.1038/ncomms10632https://doaj.org/toc/2041-1723Wide-bandgap, metal-oxide thin-film transistors are limited in their application by the lack of available p-type material. Here, the authors demonstrate a wide-bandgap metal-oxide n-type semiconductor that sustains a strong p-type inversion layer using a barrier dielectric with a high-dielectric constant.Gem ShouteAmir AfsharTriratna MuneshwarKenneth CadienDouglas BarlageNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-5 (2016)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Gem Shoute
Amir Afshar
Triratna Muneshwar
Kenneth Cadien
Douglas Barlage
Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
description Wide-bandgap, metal-oxide thin-film transistors are limited in their application by the lack of available p-type material. Here, the authors demonstrate a wide-bandgap metal-oxide n-type semiconductor that sustains a strong p-type inversion layer using a barrier dielectric with a high-dielectric constant.
format article
author Gem Shoute
Amir Afshar
Triratna Muneshwar
Kenneth Cadien
Douglas Barlage
author_facet Gem Shoute
Amir Afshar
Triratna Muneshwar
Kenneth Cadien
Douglas Barlage
author_sort Gem Shoute
title Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
title_short Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
title_full Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
title_fullStr Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
title_full_unstemmed Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
title_sort sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
publisher Nature Portfolio
publishDate 2016
url https://doaj.org/article/033d20f2e4f942ad8d0dd2232ee14cee
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AT amirafshar sustainedholeinversionlayerinawidebandgapmetaloxidesemiconductorwithenhancedtunnelcurrent
AT triratnamuneshwar sustainedholeinversionlayerinawidebandgapmetaloxidesemiconductorwithenhancedtunnelcurrent
AT kennethcadien sustainedholeinversionlayerinawidebandgapmetaloxidesemiconductorwithenhancedtunnelcurrent
AT douglasbarlage sustainedholeinversionlayerinawidebandgapmetaloxidesemiconductorwithenhancedtunnelcurrent
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