Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
Wide-bandgap, metal-oxide thin-film transistors are limited in their application by the lack of available p-type material. Here, the authors demonstrate a wide-bandgap metal-oxide n-type semiconductor that sustains a strong p-type inversion layer using a barrier dielectric with a high-dielectric con...
Guardado en:
Autores principales: | , , , , |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2016
|
Materias: | |
Acceso en línea: | https://doaj.org/article/033d20f2e4f942ad8d0dd2232ee14cee |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
id |
oai:doaj.org-article:033d20f2e4f942ad8d0dd2232ee14cee |
---|---|
record_format |
dspace |
spelling |
oai:doaj.org-article:033d20f2e4f942ad8d0dd2232ee14cee2021-12-02T15:35:19ZSustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current10.1038/ncomms106322041-1723https://doaj.org/article/033d20f2e4f942ad8d0dd2232ee14cee2016-02-01T00:00:00Zhttps://doi.org/10.1038/ncomms10632https://doaj.org/toc/2041-1723Wide-bandgap, metal-oxide thin-film transistors are limited in their application by the lack of available p-type material. Here, the authors demonstrate a wide-bandgap metal-oxide n-type semiconductor that sustains a strong p-type inversion layer using a barrier dielectric with a high-dielectric constant.Gem ShouteAmir AfsharTriratna MuneshwarKenneth CadienDouglas BarlageNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-5 (2016) |
institution |
DOAJ |
collection |
DOAJ |
language |
EN |
topic |
Science Q |
spellingShingle |
Science Q Gem Shoute Amir Afshar Triratna Muneshwar Kenneth Cadien Douglas Barlage Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
description |
Wide-bandgap, metal-oxide thin-film transistors are limited in their application by the lack of available p-type material. Here, the authors demonstrate a wide-bandgap metal-oxide n-type semiconductor that sustains a strong p-type inversion layer using a barrier dielectric with a high-dielectric constant. |
format |
article |
author |
Gem Shoute Amir Afshar Triratna Muneshwar Kenneth Cadien Douglas Barlage |
author_facet |
Gem Shoute Amir Afshar Triratna Muneshwar Kenneth Cadien Douglas Barlage |
author_sort |
Gem Shoute |
title |
Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
title_short |
Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
title_full |
Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
title_fullStr |
Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
title_full_unstemmed |
Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
title_sort |
sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
publisher |
Nature Portfolio |
publishDate |
2016 |
url |
https://doaj.org/article/033d20f2e4f942ad8d0dd2232ee14cee |
work_keys_str_mv |
AT gemshoute sustainedholeinversionlayerinawidebandgapmetaloxidesemiconductorwithenhancedtunnelcurrent AT amirafshar sustainedholeinversionlayerinawidebandgapmetaloxidesemiconductorwithenhancedtunnelcurrent AT triratnamuneshwar sustainedholeinversionlayerinawidebandgapmetaloxidesemiconductorwithenhancedtunnelcurrent AT kennethcadien sustainedholeinversionlayerinawidebandgapmetaloxidesemiconductorwithenhancedtunnelcurrent AT douglasbarlage sustainedholeinversionlayerinawidebandgapmetaloxidesemiconductorwithenhancedtunnelcurrent |
_version_ |
1718386575305342976 |