Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
Wide-bandgap, metal-oxide thin-film transistors are limited in their application by the lack of available p-type material. Here, the authors demonstrate a wide-bandgap metal-oxide n-type semiconductor that sustains a strong p-type inversion layer using a barrier dielectric with a high-dielectric con...
Guardado en:
Autores principales: | Gem Shoute, Amir Afshar, Triratna Muneshwar, Kenneth Cadien, Douglas Barlage |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2016
|
Materias: | |
Acceso en línea: | https://doaj.org/article/033d20f2e4f942ad8d0dd2232ee14cee |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Supramolecular engineering of charge transfer in wide bandgap organic semiconductors with enhanced visible-to-NIR photoresponse
por: Yifan Yao, et al.
Publicado: (2021) -
Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3
por: Zhe Wang, et al.
Publicado: (2018) -
Strain-engineered inverse charge-funnelling in layered semiconductors
por: Adolfo De Sanctis, et al.
Publicado: (2018) -
Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions
por: Janika Tang, et al.
Publicado: (2017) -
Bandgap control in two-dimensional semiconductors via coherent doping of plasmonic hot electrons
por: Yu-Hui Chen, et al.
Publicado: (2021)