Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires

Abstract Recently, owing to the large surface-area-to-volume ratio of nanowires (NWs), manipulation of their surface states becomes technologically important and being investigated for various applications. Here, an in-situ surfactant-assisted chemical vapor deposition is developed with various chal...

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Auteurs principaux: Zai-xing Yang, Yanxue Yin, Jiamin Sun, Luozhen Bian, Ning Han, Ziyao Zhou, Lei Shu, Fengyun Wang, Yunfa Chen, Aimin Song, Johnny C. Ho
Format: article
Langue:EN
Publié: Nature Portfolio 2018
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Accès en ligne:https://doaj.org/article/0344619577a24189b903bc25d3a2f677
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