Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires

Abstract Recently, owing to the large surface-area-to-volume ratio of nanowires (NWs), manipulation of their surface states becomes technologically important and being investigated for various applications. Here, an in-situ surfactant-assisted chemical vapor deposition is developed with various chal...

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Autores principales:	Zai-xing Yang, Yanxue Yin, Jiamin Sun, Luozhen Bian, Ning Han, Ziyao Zhou, Lei Shu, Fengyun Wang, Yunfa Chen, Aimin Song, Johnny C. Ho
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/0344619577a24189b903bc25d3a2f677
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spelling	oai:doaj.org-article:0344619577a24189b903bc25d3a2f6772021-12-02T11:40:26ZChalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires10.1038/s41598-018-25209-x2045-2322https://doaj.org/article/0344619577a24189b903bc25d3a2f6772018-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-25209-xhttps://doaj.org/toc/2045-2322Abstract Recently, owing to the large surface-area-to-volume ratio of nanowires (NWs), manipulation of their surface states becomes technologically important and being investigated for various applications. Here, an in-situ surfactant-assisted chemical vapor deposition is developed with various chalcogens (e.g. S, Se and Te) as the passivators to enhance the NW growth and to manipulate the controllable p-n conductivity switching of fabricated NW devices. Due to the optimal size effect and electronegativity matching, Se is observed to provide the best NW surface passivation in diminishing the space charge depletion effect induced by the oxide shell and yielding the less p-type (i.e. inversion) or even insulating conductivity, as compared with S delivering the intense p-type conductivity for thin NWs with the diameter of ~30 nm. Te does not only provide the surface passivation, but also dopes the NW surface into n-type conductivity by donating electrons. All of the results can be extended to other kinds of NWs with similar surface effects, resulting in careful device design considerations with appropriate surface passivation for achieving the optimal NW device performances.Zai-xing YangYanxue YinJiamin SunLuozhen BianNing HanZiyao ZhouLei ShuFengyun WangYunfa ChenAimin SongJohnny C. HoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Zai-xing Yang Yanxue Yin Jiamin Sun Luozhen Bian Ning Han Ziyao Zhou Lei Shu Fengyun Wang Yunfa Chen Aimin Song Johnny C. Ho Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires
description	Abstract Recently, owing to the large surface-area-to-volume ratio of nanowires (NWs), manipulation of their surface states becomes technologically important and being investigated for various applications. Here, an in-situ surfactant-assisted chemical vapor deposition is developed with various chalcogens (e.g. S, Se and Te) as the passivators to enhance the NW growth and to manipulate the controllable p-n conductivity switching of fabricated NW devices. Due to the optimal size effect and electronegativity matching, Se is observed to provide the best NW surface passivation in diminishing the space charge depletion effect induced by the oxide shell and yielding the less p-type (i.e. inversion) or even insulating conductivity, as compared with S delivering the intense p-type conductivity for thin NWs with the diameter of ~30 nm. Te does not only provide the surface passivation, but also dopes the NW surface into n-type conductivity by donating electrons. All of the results can be extended to other kinds of NWs with similar surface effects, resulting in careful device design considerations with appropriate surface passivation for achieving the optimal NW device performances.
format	article
author	Zai-xing Yang Yanxue Yin Jiamin Sun Luozhen Bian Ning Han Ziyao Zhou Lei Shu Fengyun Wang Yunfa Chen Aimin Song Johnny C. Ho
author_facet	Zai-xing Yang Yanxue Yin Jiamin Sun Luozhen Bian Ning Han Ziyao Zhou Lei Shu Fengyun Wang Yunfa Chen Aimin Song Johnny C. Ho
author_sort	Zai-xing Yang
title	Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires
title_short	Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires
title_full	Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires
title_fullStr	Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires
title_full_unstemmed	Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires
title_sort	chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of gaas nanowires
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/0344619577a24189b903bc25d3a2f677
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Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires

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