Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

Plasma-enhanced chemical vapour deposition (PECVD) is an industrially compatible microelectronics technology. Here, the authors use PECVD to obtain low-temperature, catalyst-free growth of poly-crystalline two-dimensional hexagonal-boron nitride, thus enabling superior thermal dissipation in WSe2 fi...

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Autores principales:	Donghua Liu, Xiaosong Chen, Yaping Yan, Zhongwei Zhang, Zhepeng Jin, Kongyang Yi, Cong Zhang, Yujie Zheng, Yao Wang, Jun Yang, Xiangfan Xu, Jie Chen, Yunhao Lu, Dapeng Wei, Andrew Thye Shen Wee, Dacheng Wei
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/03f0bb60becd4df091fcee1d73322325
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spelling	oai:doaj.org-article:03f0bb60becd4df091fcee1d733223252021-12-02T13:23:48ZConformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation10.1038/s41467-019-09016-02041-1723https://doaj.org/article/03f0bb60becd4df091fcee1d733223252019-03-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-09016-0https://doaj.org/toc/2041-1723Plasma-enhanced chemical vapour deposition (PECVD) is an industrially compatible microelectronics technology. Here, the authors use PECVD to obtain low-temperature, catalyst-free growth of poly-crystalline two-dimensional hexagonal-boron nitride, thus enabling superior thermal dissipation in WSe2 field-effect transistors with mobility up to 121 cm2 V−1 s−1.Donghua LiuXiaosong ChenYaping YanZhongwei ZhangZhepeng JinKongyang YiCong ZhangYujie ZhengYao WangJun YangXiangfan XuJie ChenYunhao LuDapeng WeiAndrew Thye Shen WeeDacheng WeiNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-11 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Donghua Liu Xiaosong Chen Yaping Yan Zhongwei Zhang Zhepeng Jin Kongyang Yi Cong Zhang Yujie Zheng Yao Wang Jun Yang Xiangfan Xu Jie Chen Yunhao Lu Dapeng Wei Andrew Thye Shen Wee Dacheng Wei Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation
description	Plasma-enhanced chemical vapour deposition (PECVD) is an industrially compatible microelectronics technology. Here, the authors use PECVD to obtain low-temperature, catalyst-free growth of poly-crystalline two-dimensional hexagonal-boron nitride, thus enabling superior thermal dissipation in WSe2 field-effect transistors with mobility up to 121 cm2 V−1 s−1.
format	article
author	Donghua Liu Xiaosong Chen Yaping Yan Zhongwei Zhang Zhepeng Jin Kongyang Yi Cong Zhang Yujie Zheng Yao Wang Jun Yang Xiangfan Xu Jie Chen Yunhao Lu Dapeng Wei Andrew Thye Shen Wee Dacheng Wei
author_facet	Donghua Liu Xiaosong Chen Yaping Yan Zhongwei Zhang Zhepeng Jin Kongyang Yi Cong Zhang Yujie Zheng Yao Wang Jun Yang Xiangfan Xu Jie Chen Yunhao Lu Dapeng Wei Andrew Thye Shen Wee Dacheng Wei
author_sort	Donghua Liu
title	Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation
title_short	Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation
title_full	Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation
title_fullStr	Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation
title_full_unstemmed	Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation
title_sort	conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/03f0bb60becd4df091fcee1d73322325
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Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

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