Device performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device

Abstract An advanced organic photodetector (OPD) with a butter layer of Si-rich silicon oxynitride (SiOxNy) was fabricated. The detector structure is as follows: Indium tin oxide (ITO) coated glass substrate/SiOxNy(10 nm)/naphthalene-based donor:C60(1:1)/ITO. Values of x and y in SiOxNy were careful...

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Autores principales: Sung Heo, Jooho lee, Seong Heon Kim, Dong-Jin Yun, Jong-Bong Park, Kihong Kim, NamJeong Kim, Yongsung Kim, Dongwook Lee, Kyu-Sik Kim, Hee Jae Kang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/050c3e9de8b74cbbbe81ce6d0acf6845
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