Device performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device

Abstract An advanced organic photodetector (OPD) with a butter layer of Si-rich silicon oxynitride (SiOxNy) was fabricated. The detector structure is as follows: Indium tin oxide (ITO) coated glass substrate/SiOxNy(10 nm)/naphthalene-based donor:C60(1:1)/ITO. Values of x and y in SiOxNy were careful...

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Autores principales:	Sung Heo, Jooho lee, Seong Heon Kim, Dong-Jin Yun, Jong-Bong Park, Kihong Kim, NamJeong Kim, Yongsung Kim, Dongwook Lee, Kyu-Sik Kim, Hee Jae Kang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/050c3e9de8b74cbbbe81ce6d0acf6845
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spelling	oai:doaj.org-article:050c3e9de8b74cbbbe81ce6d0acf68452021-12-02T11:40:51ZDevice performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device10.1038/s41598-017-01653-z2045-2322https://doaj.org/article/050c3e9de8b74cbbbe81ce6d0acf68452017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-01653-zhttps://doaj.org/toc/2045-2322Abstract An advanced organic photodetector (OPD) with a butter layer of Si-rich silicon oxynitride (SiOxNy) was fabricated. The detector structure is as follows: Indium tin oxide (ITO) coated glass substrate/SiOxNy(10 nm)/naphthalene-based donor:C60(1:1)/ITO. Values of x and y in SiOxNy were carefully controlled and the detector performances such as dark current and thermal stability were investigated. When the values of x and y are 0.16 and 0.66, the detector illustrates low dark current as well as excellent thermal stability. In the OPD, silicon oxynitride layer works as electron barrier under reverse bias, leading to the decrease of dark current and increase of detectivity. Since the band gap of silicon oxynitride unlike conventional buffer layers can also be controlled by adjusting x and y values, it can be adapted into various photodiode applications.Sung HeoJooho leeSeong Heon KimDong-Jin YunJong-Bong ParkKihong KimNamJeong KimYongsung KimDongwook LeeKyu-Sik KimHee Jae KangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-6 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Sung Heo Jooho lee Seong Heon Kim Dong-Jin Yun Jong-Bong Park Kihong Kim NamJeong Kim Yongsung Kim Dongwook Lee Kyu-Sik Kim Hee Jae Kang Device performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device
description	Abstract An advanced organic photodetector (OPD) with a butter layer of Si-rich silicon oxynitride (SiOxNy) was fabricated. The detector structure is as follows: Indium tin oxide (ITO) coated glass substrate/SiOxNy(10 nm)/naphthalene-based donor:C60(1:1)/ITO. Values of x and y in SiOxNy were carefully controlled and the detector performances such as dark current and thermal stability were investigated. When the values of x and y are 0.16 and 0.66, the detector illustrates low dark current as well as excellent thermal stability. In the OPD, silicon oxynitride layer works as electron barrier under reverse bias, leading to the decrease of dark current and increase of detectivity. Since the band gap of silicon oxynitride unlike conventional buffer layers can also be controlled by adjusting x and y values, it can be adapted into various photodiode applications.
format	article
author	Sung Heo Jooho lee Seong Heon Kim Dong-Jin Yun Jong-Bong Park Kihong Kim NamJeong Kim Yongsung Kim Dongwook Lee Kyu-Sik Kim Hee Jae Kang
author_facet	Sung Heo Jooho lee Seong Heon Kim Dong-Jin Yun Jong-Bong Park Kihong Kim NamJeong Kim Yongsung Kim Dongwook Lee Kyu-Sik Kim Hee Jae Kang
author_sort	Sung Heo
title	Device performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device
title_short	Device performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device
title_full	Device performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device
title_fullStr	Device performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device
title_full_unstemmed	Device performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device
title_sort	device performance enhancement via a si-rich silicon oxynitride buffer layer for the organic photodetecting device
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/050c3e9de8b74cbbbe81ce6d0acf6845
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Device performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device

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