SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode

SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode

A silicon carbide (SiC) trench MOSFET featuring fin-shaped gate and integrated Schottky barrier diode under split P type shield (SPS) protection (FS-TMOS) is proposed by finite element modeling. The physical mechanism of FS-TMOS is studied comprehensively in terms of fundamental (blocking, conductio...

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Enregistré dans:
Détails bibliographiques
Auteurs principaux: Xiaochuan Deng, Rui Liu, Songjun Li, Ling Li, Hao Wu, Xuan Li
Format: article
Langue:EN
Publié: MDPI AG 2021
Sujets:
silicon carbide (SiC) trench MOSFET
split P shield (SPS)
fin-shaped gate
integrated SBD
transient extreme stress
Technology
T
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
Accès en ligne:https://doaj.org/article/067d57f2a3634add99350f34b931800d
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Internet

https://doaj.org/article/067d57f2a3634add99350f34b931800d

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