SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode

A silicon carbide (SiC) trench MOSFET featuring fin-shaped gate and integrated Schottky barrier diode under split P type shield (SPS) protection (FS-TMOS) is proposed by finite element modeling. The physical mechanism of FS-TMOS is studied comprehensively in terms of fundamental (blocking, conductio...

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Autores principales:	Xiaochuan Deng, Rui Liu, Songjun Li, Ling Li, Hao Wu, Xuan Li
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	silicon carbide (SiC) trench MOSFET split P shield (SPS) fin-shaped gate integrated SBD transient extreme stress Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Acceso en línea:	https://doaj.org/article/067d57f2a3634add99350f34b931800d
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spelling	oai:doaj.org-article:067d57f2a3634add99350f34b931800d2021-11-25T18:16:19ZSiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode10.3390/ma142270961996-1944https://doaj.org/article/067d57f2a3634add99350f34b931800d2021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/22/7096https://doaj.org/toc/1996-1944A silicon carbide (SiC) trench MOSFET featuring fin-shaped gate and integrated Schottky barrier diode under split P type shield (SPS) protection (FS-TMOS) is proposed by finite element modeling. The physical mechanism of FS-TMOS is studied comprehensively in terms of fundamental (blocking, conduction, and dynamic) performance and transient extreme stress reliability. The fin-shaped gate on the sidewall of the trench and integrated Schottky diode at the bottom of trench aim to the reduction of gate charge and improvement on the third quadrant performance, respectively. The SPS region is fully utilized to suppress excessive electric field both at trench oxide and Schottky contact when OFF-state. Compared with conventional trench MOSFET (C-TMOS), the gate charge, Miller charge, <i>V</i><sub>on</sub> at third quadrant, <i>R</i><sub>on,sp</sub>·<i>Q</i><sub>gd</sub>, and <i>R</i><sub>on,sp</sub>·<i>Q</i><sub>g</sub> of FS-TMOS are significantly reduced by 34%, 20%, 65%, 0.1%, and 14%, respectively. Furthermore, short-circuit and avalanche capabilities are discussed, verifying the FS-TMOS is more robust than C-TMOS. It suggests that the proposed FS-TMOS is a promising candidate for next-generation high efficiency and high-power density applications.Xiaochuan DengRui LiuSongjun LiLing LiHao WuXuan LiMDPI AGarticlesilicon carbide (SiC) trench MOSFETsplit P shield (SPS)fin-shaped gateintegrated SBDtransient extreme stressTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 7096, p 7096 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	silicon carbide (SiC) trench MOSFET split P shield (SPS) fin-shaped gate integrated SBD transient extreme stress Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
spellingShingle	silicon carbide (SiC) trench MOSFET split P shield (SPS) fin-shaped gate integrated SBD transient extreme stress Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Xiaochuan Deng Rui Liu Songjun Li Ling Li Hao Wu Xuan Li SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode
description	A silicon carbide (SiC) trench MOSFET featuring fin-shaped gate and integrated Schottky barrier diode under split P type shield (SPS) protection (FS-TMOS) is proposed by finite element modeling. The physical mechanism of FS-TMOS is studied comprehensively in terms of fundamental (blocking, conduction, and dynamic) performance and transient extreme stress reliability. The fin-shaped gate on the sidewall of the trench and integrated Schottky diode at the bottom of trench aim to the reduction of gate charge and improvement on the third quadrant performance, respectively. The SPS region is fully utilized to suppress excessive electric field both at trench oxide and Schottky contact when OFF-state. Compared with conventional trench MOSFET (C-TMOS), the gate charge, Miller charge, <i>V</i><sub>on</sub> at third quadrant, <i>R</i><sub>on,sp</sub>·<i>Q</i><sub>gd</sub>, and <i>R</i><sub>on,sp</sub>·<i>Q</i><sub>g</sub> of FS-TMOS are significantly reduced by 34%, 20%, 65%, 0.1%, and 14%, respectively. Furthermore, short-circuit and avalanche capabilities are discussed, verifying the FS-TMOS is more robust than C-TMOS. It suggests that the proposed FS-TMOS is a promising candidate for next-generation high efficiency and high-power density applications.
format	article
author	Xiaochuan Deng Rui Liu Songjun Li Ling Li Hao Wu Xuan Li
author_facet	Xiaochuan Deng Rui Liu Songjun Li Ling Li Hao Wu Xuan Li
author_sort	Xiaochuan Deng
title	SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode
title_short	SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode
title_full	SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode
title_fullStr	SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode
title_full_unstemmed	SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode
title_sort	sic fin-shaped gate trench mosfet with integrated schottky diode
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/067d57f2a3634add99350f34b931800d
work_keys_str_mv	AT xiaochuandeng sicfinshapedgatetrenchmosfetwithintegratedschottkydiode AT ruiliu sicfinshapedgatetrenchmosfetwithintegratedschottkydiode AT songjunli sicfinshapedgatetrenchmosfetwithintegratedschottkydiode AT lingli sicfinshapedgatetrenchmosfetwithintegratedschottkydiode AT haowu sicfinshapedgatetrenchmosfetwithintegratedschottkydiode AT xuanli sicfinshapedgatetrenchmosfetwithintegratedschottkydiode
_version_	1718411360696532992

SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode

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