SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode
A silicon carbide (SiC) trench MOSFET featuring fin-shaped gate and integrated Schottky barrier diode under split P type shield (SPS) protection (FS-TMOS) is proposed by finite element modeling. The physical mechanism of FS-TMOS is studied comprehensively in terms of fundamental (blocking, conductio...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/067d57f2a3634add99350f34b931800d |
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