Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer

Simulation results are presented that explore an innovative, new design for X-ray detection in the 20–50 keV range that is an alternative to traditional direct and indirect detection methods. Typical indirect detection using a scintillator must trade-off between absorption efficiency and spatial res...

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Autores principales: Kaitlin M. Anagnost, Eldred Lee, Zhehui Wang, Jifeng Liu, Eric R. Fossum
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Lenguaje:EN
Publicado: MDPI AG 2021
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Acceso en línea:https://doaj.org/article/06ea42cec4f443198a2e42637f2dfa43
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spelling oai:doaj.org-article:06ea42cec4f443198a2e42637f2dfa432021-11-25T18:57:29ZSimulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer10.3390/s212275661424-8220https://doaj.org/article/06ea42cec4f443198a2e42637f2dfa432021-11-01T00:00:00Zhttps://www.mdpi.com/1424-8220/21/22/7566https://doaj.org/toc/1424-8220Simulation results are presented that explore an innovative, new design for X-ray detection in the 20–50 keV range that is an alternative to traditional direct and indirect detection methods. Typical indirect detection using a scintillator must trade-off between absorption efficiency and spatial resolution. With a high-Z layer that down-converts incident photons on top of a silicon detector, this design has increased absorption efficiency without sacrificing spatial resolution. Simulation results elucidate the relationship between the thickness of each layer and the number of photoelectrons generated. Further, the physics behind the production of electron-hole pairs in the silicon layer is studied via a second model to shed more light on the detector’s functionality. Together, the two models provide a greater understanding of this detector and reveal the potential of this novel form of X-ray detection.Kaitlin M. AnagnostEldred LeeZhehui WangJifeng LiuEric R. FossumMDPI AGarticleX-ray detectiondirect detectionindirect detectionimage sensorscintillatorChemical technologyTP1-1185ENSensors, Vol 21, Iss 7566, p 7566 (2021)
institution DOAJ
collection DOAJ
language EN
topic X-ray detection
direct detection
indirect detection
image sensor
scintillator
Chemical technology
TP1-1185
spellingShingle X-ray detection
direct detection
indirect detection
image sensor
scintillator
Chemical technology
TP1-1185
Kaitlin M. Anagnost
Eldred Lee
Zhehui Wang
Jifeng Liu
Eric R. Fossum
Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer
description Simulation results are presented that explore an innovative, new design for X-ray detection in the 20–50 keV range that is an alternative to traditional direct and indirect detection methods. Typical indirect detection using a scintillator must trade-off between absorption efficiency and spatial resolution. With a high-Z layer that down-converts incident photons on top of a silicon detector, this design has increased absorption efficiency without sacrificing spatial resolution. Simulation results elucidate the relationship between the thickness of each layer and the number of photoelectrons generated. Further, the physics behind the production of electron-hole pairs in the silicon layer is studied via a second model to shed more light on the detector’s functionality. Together, the two models provide a greater understanding of this detector and reveal the potential of this novel form of X-ray detection.
format article
author Kaitlin M. Anagnost
Eldred Lee
Zhehui Wang
Jifeng Liu
Eric R. Fossum
author_facet Kaitlin M. Anagnost
Eldred Lee
Zhehui Wang
Jifeng Liu
Eric R. Fossum
author_sort Kaitlin M. Anagnost
title Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer
title_short Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer
title_full Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer
title_fullStr Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer
title_full_unstemmed Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer
title_sort simulating 50 kev x-ray photon detection in silicon with a down-conversion layer
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/06ea42cec4f443198a2e42637f2dfa43
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AT zhehuiwang simulating50kevxrayphotondetectioninsiliconwithadownconversionlayer
AT jifengliu simulating50kevxrayphotondetectioninsiliconwithadownconversionlayer
AT ericrfossum simulating50kevxrayphotondetectioninsiliconwithadownconversionlayer
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