Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer
Simulation results are presented that explore an innovative, new design for X-ray detection in the 20–50 keV range that is an alternative to traditional direct and indirect detection methods. Typical indirect detection using a scintillator must trade-off between absorption efficiency and spatial res...
Guardado en:
Autores principales: | , , , , |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
MDPI AG
2021
|
Materias: | |
Acceso en línea: | https://doaj.org/article/06ea42cec4f443198a2e42637f2dfa43 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
id |
oai:doaj.org-article:06ea42cec4f443198a2e42637f2dfa43 |
---|---|
record_format |
dspace |
spelling |
oai:doaj.org-article:06ea42cec4f443198a2e42637f2dfa432021-11-25T18:57:29ZSimulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer10.3390/s212275661424-8220https://doaj.org/article/06ea42cec4f443198a2e42637f2dfa432021-11-01T00:00:00Zhttps://www.mdpi.com/1424-8220/21/22/7566https://doaj.org/toc/1424-8220Simulation results are presented that explore an innovative, new design for X-ray detection in the 20–50 keV range that is an alternative to traditional direct and indirect detection methods. Typical indirect detection using a scintillator must trade-off between absorption efficiency and spatial resolution. With a high-Z layer that down-converts incident photons on top of a silicon detector, this design has increased absorption efficiency without sacrificing spatial resolution. Simulation results elucidate the relationship between the thickness of each layer and the number of photoelectrons generated. Further, the physics behind the production of electron-hole pairs in the silicon layer is studied via a second model to shed more light on the detector’s functionality. Together, the two models provide a greater understanding of this detector and reveal the potential of this novel form of X-ray detection.Kaitlin M. AnagnostEldred LeeZhehui WangJifeng LiuEric R. FossumMDPI AGarticleX-ray detectiondirect detectionindirect detectionimage sensorscintillatorChemical technologyTP1-1185ENSensors, Vol 21, Iss 7566, p 7566 (2021) |
institution |
DOAJ |
collection |
DOAJ |
language |
EN |
topic |
X-ray detection direct detection indirect detection image sensor scintillator Chemical technology TP1-1185 |
spellingShingle |
X-ray detection direct detection indirect detection image sensor scintillator Chemical technology TP1-1185 Kaitlin M. Anagnost Eldred Lee Zhehui Wang Jifeng Liu Eric R. Fossum Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer |
description |
Simulation results are presented that explore an innovative, new design for X-ray detection in the 20–50 keV range that is an alternative to traditional direct and indirect detection methods. Typical indirect detection using a scintillator must trade-off between absorption efficiency and spatial resolution. With a high-Z layer that down-converts incident photons on top of a silicon detector, this design has increased absorption efficiency without sacrificing spatial resolution. Simulation results elucidate the relationship between the thickness of each layer and the number of photoelectrons generated. Further, the physics behind the production of electron-hole pairs in the silicon layer is studied via a second model to shed more light on the detector’s functionality. Together, the two models provide a greater understanding of this detector and reveal the potential of this novel form of X-ray detection. |
format |
article |
author |
Kaitlin M. Anagnost Eldred Lee Zhehui Wang Jifeng Liu Eric R. Fossum |
author_facet |
Kaitlin M. Anagnost Eldred Lee Zhehui Wang Jifeng Liu Eric R. Fossum |
author_sort |
Kaitlin M. Anagnost |
title |
Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer |
title_short |
Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer |
title_full |
Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer |
title_fullStr |
Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer |
title_full_unstemmed |
Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer |
title_sort |
simulating 50 kev x-ray photon detection in silicon with a down-conversion layer |
publisher |
MDPI AG |
publishDate |
2021 |
url |
https://doaj.org/article/06ea42cec4f443198a2e42637f2dfa43 |
work_keys_str_mv |
AT kaitlinmanagnost simulating50kevxrayphotondetectioninsiliconwithadownconversionlayer AT eldredlee simulating50kevxrayphotondetectioninsiliconwithadownconversionlayer AT zhehuiwang simulating50kevxrayphotondetectioninsiliconwithadownconversionlayer AT jifengliu simulating50kevxrayphotondetectioninsiliconwithadownconversionlayer AT ericrfossum simulating50kevxrayphotondetectioninsiliconwithadownconversionlayer |
_version_ |
1718410444124717056 |