Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer

Simulation results are presented that explore an innovative, new design for X-ray detection in the 20–50 keV range that is an alternative to traditional direct and indirect detection methods. Typical indirect detection using a scintillator must trade-off between absorption efficiency and spatial res...

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Auteurs principaux: Kaitlin M. Anagnost, Eldred Lee, Zhehui Wang, Jifeng Liu, Eric R. Fossum
Format: article
Langue:EN
Publié: MDPI AG 2021
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Accès en ligne:https://doaj.org/article/06ea42cec4f443198a2e42637f2dfa43
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