A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics

With this review paper we provide an overview of the main degradation mechanisms that limit the long-term reliability of IR semiconductor lasers for silicon photonics applications. The discussion is focused on two types of laser diodes: heterogeneous III–V lasers bonded onto silicon-on-insulator waf...

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Autores principales:	Matteo Buffolo, Carlo De Santi, Justin Norman, Chen Shang, John Edward Bowers, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	silicon photonics heterogeneous lasers InAs quantum-dots degradation dislocations Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/07f43de492ec463ebeb89c4da0b414bf
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spelling	oai:doaj.org-article:07f43de492ec463ebeb89c4da0b414bf2021-11-25T17:24:05ZA Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics10.3390/electronics102227342079-9292https://doaj.org/article/07f43de492ec463ebeb89c4da0b414bf2021-11-01T00:00:00Zhttps://www.mdpi.com/2079-9292/10/22/2734https://doaj.org/toc/2079-9292With this review paper we provide an overview of the main degradation mechanisms that limit the long-term reliability of IR semiconductor lasers for silicon photonics applications. The discussion is focused on two types of laser diodes: heterogeneous III–V lasers bonded onto silicon-on-insulator wafers, and InAs quantum-dot lasers epitaxially grown on silicon. A comprehensive analysis of the reliability-oriented literature published to date reveals that state-of-the-art heterogeneous laser sources share with conventional laser diodes their major epitaxy-related degradation processes, such as the generation of non-radiative recombination centers or dopant diffusion, while eliminating cleaved facets and exposed mirrors. The lifetime of InAs quantum dot lasers grown on silicon, whose development represents a fundamental step toward a fully epitaxial integration of future photonic integrated circuits, is strongly limited by the density of extended defects, mainly misfit dislocations, protruding into the active layer of the devices. The concentration of such defects, along with inefficient carrier injection and excessive carrier overflow rates, promote recombination-enhanced degradation mechanisms that reduce the long-term reliability of these sources. The impact of these misfits can be largely eliminated with the inclusion of blocking layers.Matteo BuffoloCarlo De SantiJustin NormanChen ShangJohn Edward BowersGaudenzio MeneghessoEnrico ZanoniMatteo MeneghiniMDPI AGarticlesilicon photonicsheterogeneous lasersInAs quantum-dotsdegradationdislocationsElectronicsTK7800-8360ENElectronics, Vol 10, Iss 2734, p 2734 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	silicon photonics heterogeneous lasers InAs quantum-dots degradation dislocations Electronics TK7800-8360
spellingShingle	silicon photonics heterogeneous lasers InAs quantum-dots degradation dislocations Electronics TK7800-8360 Matteo Buffolo Carlo De Santi Justin Norman Chen Shang John Edward Bowers Gaudenzio Meneghesso Enrico Zanoni Matteo Meneghini A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics
description	With this review paper we provide an overview of the main degradation mechanisms that limit the long-term reliability of IR semiconductor lasers for silicon photonics applications. The discussion is focused on two types of laser diodes: heterogeneous III–V lasers bonded onto silicon-on-insulator wafers, and InAs quantum-dot lasers epitaxially grown on silicon. A comprehensive analysis of the reliability-oriented literature published to date reveals that state-of-the-art heterogeneous laser sources share with conventional laser diodes their major epitaxy-related degradation processes, such as the generation of non-radiative recombination centers or dopant diffusion, while eliminating cleaved facets and exposed mirrors. The lifetime of InAs quantum dot lasers grown on silicon, whose development represents a fundamental step toward a fully epitaxial integration of future photonic integrated circuits, is strongly limited by the density of extended defects, mainly misfit dislocations, protruding into the active layer of the devices. The concentration of such defects, along with inefficient carrier injection and excessive carrier overflow rates, promote recombination-enhanced degradation mechanisms that reduce the long-term reliability of these sources. The impact of these misfits can be largely eliminated with the inclusion of blocking layers.
format	article
author	Matteo Buffolo Carlo De Santi Justin Norman Chen Shang John Edward Bowers Gaudenzio Meneghesso Enrico Zanoni Matteo Meneghini
author_facet	Matteo Buffolo Carlo De Santi Justin Norman Chen Shang John Edward Bowers Gaudenzio Meneghesso Enrico Zanoni Matteo Meneghini
author_sort	Matteo Buffolo
title	A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics
title_short	A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics
title_full	A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics
title_fullStr	A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics
title_full_unstemmed	A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics
title_sort	review of the reliability of integrated ir laser diodes for silicon photonics
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/07f43de492ec463ebeb89c4da0b414bf
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A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics

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