Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism

Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism

Abstract Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiOx/TiN structure have been investigated for the first time. The as-deposited amorphous BaTiOx film has been confirmed by high-resolutio...

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Autores principales: Somsubhra Chakrabarti, Sreekanth Ginnaram, Surajit Jana, Zong-Yi Wu, Kanishk Singh, Anisha Roy, Pankaj Kumar, Siddheswar Maikap, Jian-Tai Qiu, Hsin-Ming Cheng, Ling-Na Tsai, Ya-Ling Chang, Rajat Mahapatra, Jer-Ren Yang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Medicine
R
Science
Q
Acceso en línea:https://doaj.org/article/080a525a617d43608c3a44854fe7ad6f
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https://doaj.org/article/080a525a617d43608c3a44854fe7ad6f

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