Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism

Abstract Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiOx/TiN structure have been investigated for the first time. The as-deposited amorphous BaTiOx film has been confirmed by high-resolutio...

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Autores principales:	Somsubhra Chakrabarti, Sreekanth Ginnaram, Surajit Jana, Zong-Yi Wu, Kanishk Singh, Anisha Roy, Pankaj Kumar, Siddheswar Maikap, Jian-Tai Qiu, Hsin-Ming Cheng, Ling-Na Tsai, Ya-Ling Chang, Rajat Mahapatra, Jer-Ren Yang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/080a525a617d43608c3a44854fe7ad6f
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spelling	oai:doaj.org-article:080a525a617d43608c3a44854fe7ad6f2021-12-02T12:31:45ZNegative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism10.1038/s41598-017-05059-92045-2322https://doaj.org/article/080a525a617d43608c3a44854fe7ad6f2017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-05059-9https://doaj.org/toc/2045-2322Abstract Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiOx/TiN structure have been investigated for the first time. The as-deposited amorphous BaTiOx film has been confirmed by high-resolution transmission electron microscopy. X-ray photo-electron spectroscopy shows different oxidation states of Ba in the switching material, which is responsible for tunable more than 10 resistance states by varying negative stop voltage owing to slow decay value of RESET slope (217.39 mV/decade). Quantum conductance phenomenon has been observed in staircase RESET cycle of the memory devices. By inspecting the oxidation states of Ba+ and Ba2+ through measuring H2O2 with a low concentration of 1 nM in electrolyte/BaTiOx/SiO2/p-Si structure, the switching mechanism of each HRS level as well as the multi-level phenomenon has been explained by gradual dissolution of oxygen vacancy filament. Along with negative stop voltage modulated multi-level, current compliance dependent multi-level has also been demonstrated and resistance ratio up to 2000 has been achieved even for a thin (<5 nm) switching material. By considering oxidation-reduction of the conducting filaments, the current-voltage switching curve has been simulated as well. Hence, multi-level resistive switching of Cr/BaTiOx/TiN structure implies the promising applications in high dense, multistate non-volatile memories in near future.Somsubhra ChakrabartiSreekanth GinnaramSurajit JanaZong-Yi WuKanishk SinghAnisha RoyPankaj KumarSiddheswar MaikapJian-Tai QiuHsin-Ming ChengLing-Na TsaiYa-Ling ChangRajat MahapatraJer-Ren YangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-13 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Somsubhra Chakrabarti Sreekanth Ginnaram Surajit Jana Zong-Yi Wu Kanishk Singh Anisha Roy Pankaj Kumar Siddheswar Maikap Jian-Tai Qiu Hsin-Ming Cheng Ling-Na Tsai Ya-Ling Chang Rajat Mahapatra Jer-Ren Yang Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism
description	Abstract Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiOx/TiN structure have been investigated for the first time. The as-deposited amorphous BaTiOx film has been confirmed by high-resolution transmission electron microscopy. X-ray photo-electron spectroscopy shows different oxidation states of Ba in the switching material, which is responsible for tunable more than 10 resistance states by varying negative stop voltage owing to slow decay value of RESET slope (217.39 mV/decade). Quantum conductance phenomenon has been observed in staircase RESET cycle of the memory devices. By inspecting the oxidation states of Ba+ and Ba2+ through measuring H2O2 with a low concentration of 1 nM in electrolyte/BaTiOx/SiO2/p-Si structure, the switching mechanism of each HRS level as well as the multi-level phenomenon has been explained by gradual dissolution of oxygen vacancy filament. Along with negative stop voltage modulated multi-level, current compliance dependent multi-level has also been demonstrated and resistance ratio up to 2000 has been achieved even for a thin (<5 nm) switching material. By considering oxidation-reduction of the conducting filaments, the current-voltage switching curve has been simulated as well. Hence, multi-level resistive switching of Cr/BaTiOx/TiN structure implies the promising applications in high dense, multistate non-volatile memories in near future.
format	article
author	Somsubhra Chakrabarti Sreekanth Ginnaram Surajit Jana Zong-Yi Wu Kanishk Singh Anisha Roy Pankaj Kumar Siddheswar Maikap Jian-Tai Qiu Hsin-Ming Cheng Ling-Na Tsai Ya-Ling Chang Rajat Mahapatra Jer-Ren Yang
author_facet	Somsubhra Chakrabarti Sreekanth Ginnaram Surajit Jana Zong-Yi Wu Kanishk Singh Anisha Roy Pankaj Kumar Siddheswar Maikap Jian-Tai Qiu Hsin-Ming Cheng Ling-Na Tsai Ya-Ling Chang Rajat Mahapatra Jer-Ren Yang
author_sort	Somsubhra Chakrabarti
title	Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism
title_short	Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism
title_full	Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism
title_fullStr	Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism
title_full_unstemmed	Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism
title_sort	negative voltage modulated multi-level resistive switching by using a cr/batiox/tin structure and quantum conductance through evidence of h2o2 sensing mechanism
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/080a525a617d43608c3a44854fe7ad6f
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Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism

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