Excellent low-voltage operating flexible ferroelectric organic transistor nonvolatile memory with a sandwiching ultrathin ferroelectric film
Abstract The high operating voltage is a primary issue preventing the commercial application of the ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memory (NVM). In this work, we propose a novel route to resolve this issue by employing two ultrathin AlOX interfacial layers sandwi...
Guardado en:
Autores principales: | , , , , |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2017
|
Materias: | |
Acceso en línea: | https://doaj.org/article/092f44eaa8f84e989e6d1e90d194492b |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|