Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2

Mid-gap defects: Carriers in a trap The temporal dynamics of photo-generated electrons and holes in MoSe2 trapped by defects are revealed. While transitional metal dichalcogenides have significant potential for optoelectronic applications, samples tend to contain defects such as vacancies and impuri...

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Auteurs principaux: Ke Chen, Rudresh Ghosh, Xianghai Meng, Anupam Roy, Joon-Seok Kim, Feng He, Sarah C. Mason, Xiaochuan Xu, Jung-Fu Lin, Deji Akinwande, Sanjay K. Banerjee, Yaguo Wang
Format: article
Langue:EN
Publié: Nature Portfolio 2017
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Accès en ligne:https://doaj.org/article/09adb0b97a6b4fd4939c1d7669bef8ec
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