Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2

Mid-gap defects: Carriers in a trap The temporal dynamics of photo-generated electrons and holes in MoSe2 trapped by defects are revealed. While transitional metal dichalcogenides have significant potential for optoelectronic applications, samples tend to contain defects such as vacancies and impuri...

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Autores principales:	Ke Chen, Rudresh Ghosh, Xianghai Meng, Anupam Roy, Joon-Seok Kim, Feng He, Sarah C. Mason, Xiaochuan Xu, Jung-Fu Lin, Deji Akinwande, Sanjay K. Banerjee, Yaguo Wang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/09adb0b97a6b4fd4939c1d7669bef8ec
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spelling	oai:doaj.org-article:09adb0b97a6b4fd4939c1d7669bef8ec2021-12-02T16:05:45ZExperimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe210.1038/s41699-017-0019-12397-7132https://doaj.org/article/09adb0b97a6b4fd4939c1d7669bef8ec2017-06-01T00:00:00Zhttps://doi.org/10.1038/s41699-017-0019-1https://doaj.org/toc/2397-7132Mid-gap defects: Carriers in a trap The temporal dynamics of photo-generated electrons and holes in MoSe2 trapped by defects are revealed. While transitional metal dichalcogenides have significant potential for optoelectronic applications, samples tend to contain defects such as vacancies and impurities, most of which affect carrier mobility by inducing mid-gap states, i.e. within the bandgap. Now a team led by Yaguo Wang from the University of Texas elucidates the role of defects in samples grown by chemical vapor deposition. Femtosecond pump probe spectroscopy reveals that such defects are prone to capture (within few picoseconds) and then release (at slightly longer timescales of hundreds of picoseconds) electrons and holes. Such dynamics are intrinsic to samples grown with this particular method and possibly linked to the oxygen-associated impurities introduced during growth. This knowledge is relevant to engineering the properties of 2D materials for optoelectronics applications.Ke ChenRudresh GhoshXianghai MengAnupam RoyJoon-Seok KimFeng HeSarah C. MasonXiaochuan XuJung-Fu LinDeji AkinwandeSanjay K. BanerjeeYaguo WangNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 1, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Ke Chen Rudresh Ghosh Xianghai Meng Anupam Roy Joon-Seok Kim Feng He Sarah C. Mason Xiaochuan Xu Jung-Fu Lin Deji Akinwande Sanjay K. Banerjee Yaguo Wang Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2
description	Mid-gap defects: Carriers in a trap The temporal dynamics of photo-generated electrons and holes in MoSe2 trapped by defects are revealed. While transitional metal dichalcogenides have significant potential for optoelectronic applications, samples tend to contain defects such as vacancies and impurities, most of which affect carrier mobility by inducing mid-gap states, i.e. within the bandgap. Now a team led by Yaguo Wang from the University of Texas elucidates the role of defects in samples grown by chemical vapor deposition. Femtosecond pump probe spectroscopy reveals that such defects are prone to capture (within few picoseconds) and then release (at slightly longer timescales of hundreds of picoseconds) electrons and holes. Such dynamics are intrinsic to samples grown with this particular method and possibly linked to the oxygen-associated impurities introduced during growth. This knowledge is relevant to engineering the properties of 2D materials for optoelectronics applications.
format	article
author	Ke Chen Rudresh Ghosh Xianghai Meng Anupam Roy Joon-Seok Kim Feng He Sarah C. Mason Xiaochuan Xu Jung-Fu Lin Deji Akinwande Sanjay K. Banerjee Yaguo Wang
author_facet	Ke Chen Rudresh Ghosh Xianghai Meng Anupam Roy Joon-Seok Kim Feng He Sarah C. Mason Xiaochuan Xu Jung-Fu Lin Deji Akinwande Sanjay K. Banerjee Yaguo Wang
author_sort	Ke Chen
title	Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2
title_short	Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2
title_full	Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2
title_fullStr	Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2
title_full_unstemmed	Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2
title_sort	experimental evidence of exciton capture by mid-gap defects in cvd grown monolayer mose2
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/09adb0b97a6b4fd4939c1d7669bef8ec
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Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2

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