Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured, analyzed with the consideration of acceptor/donor traps in the C-dope...
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Auteurs principaux: | , , , , , , , |
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Format: | article |
Langue: | EN |
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MDPI AG
2021
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Accès en ligne: | https://doaj.org/article/0a7d44ee08d044a8bbe25bae27e14489 |
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