Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode

This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured, analyzed with the consideration of acceptor/donor traps in the C-dope...

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Autores principales:	Haitao Zhang, Xuanwu Kang, Yingkui Zheng, Hao Wu, Ke Wei, Xinyu Liu, Tianchun Ye, Zhi Jin
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	GaN SBD Schottky barrier diode simulation current collapse electric field Mechanical engineering and machinery TJ1-1570
Acceso en línea:	https://doaj.org/article/0a7d44ee08d044a8bbe25bae27e14489
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spelling	oai:doaj.org-article:0a7d44ee08d044a8bbe25bae27e144892021-11-25T18:22:54ZInvestigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode10.3390/mi121112962072-666Xhttps://doaj.org/article/0a7d44ee08d044a8bbe25bae27e144892021-10-01T00:00:00Zhttps://www.mdpi.com/2072-666X/12/11/1296https://doaj.org/toc/2072-666XThis work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured, analyzed with the consideration of acceptor/donor traps in the C-doped buffer and GaN channel, and verified by Silvaco TCAD (technology computer aided design) simulations. The energy band, electric field, and electron concentration were monitored in the transient simulation to study the origin of the current collapse in the SBD. Using the verified model, the impact of carbon doping concentration in the buffer and the thickness of the unintentionally doped (UID) GaN channel in the transient behavior was estimated. Several observations were revealed. Firstly, the traps in the GaN channel and buffer layer have a significant impact on the current collapse of the device. A severe deterioration of current collapse can be observed in the SBDs with increasing density of acceptor-like traps. Secondly, the current collapse increases with the thinner UID GaN channel layer. This well-performed simulation model shows promise to be utilized for the dynamic performance optimization of GaN lateral devices.Haitao ZhangXuanwu KangYingkui ZhengHao WuKe WeiXinyu LiuTianchun YeZhi JinMDPI AGarticleGaNSBDSchottky barrier diodesimulationcurrent collapseelectric fieldMechanical engineering and machineryTJ1-1570ENMicromachines, Vol 12, Iss 1296, p 1296 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	GaN SBD Schottky barrier diode simulation current collapse electric field Mechanical engineering and machinery TJ1-1570
spellingShingle	GaN SBD Schottky barrier diode simulation current collapse electric field Mechanical engineering and machinery TJ1-1570 Haitao Zhang Xuanwu Kang Yingkui Zheng Hao Wu Ke Wei Xinyu Liu Tianchun Ye Zhi Jin Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
description	This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured, analyzed with the consideration of acceptor/donor traps in the C-doped buffer and GaN channel, and verified by Silvaco TCAD (technology computer aided design) simulations. The energy band, electric field, and electron concentration were monitored in the transient simulation to study the origin of the current collapse in the SBD. Using the verified model, the impact of carbon doping concentration in the buffer and the thickness of the unintentionally doped (UID) GaN channel in the transient behavior was estimated. Several observations were revealed. Firstly, the traps in the GaN channel and buffer layer have a significant impact on the current collapse of the device. A severe deterioration of current collapse can be observed in the SBDs with increasing density of acceptor-like traps. Secondly, the current collapse increases with the thinner UID GaN channel layer. This well-performed simulation model shows promise to be utilized for the dynamic performance optimization of GaN lateral devices.
format	article
author	Haitao Zhang Xuanwu Kang Yingkui Zheng Hao Wu Ke Wei Xinyu Liu Tianchun Ye Zhi Jin
author_facet	Haitao Zhang Xuanwu Kang Yingkui Zheng Hao Wu Ke Wei Xinyu Liu Tianchun Ye Zhi Jin
author_sort	Haitao Zhang
title	Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
title_short	Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
title_full	Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
title_fullStr	Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
title_full_unstemmed	Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
title_sort	investigation on dynamic characteristics of algan/gan lateral schottky barrier diode
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/0a7d44ee08d044a8bbe25bae27e14489
work_keys_str_mv	AT haitaozhang investigationondynamiccharacteristicsofalganganlateralschottkybarrierdiode AT xuanwukang investigationondynamiccharacteristicsofalganganlateralschottkybarrierdiode AT yingkuizheng investigationondynamiccharacteristicsofalganganlateralschottkybarrierdiode AT haowu investigationondynamiccharacteristicsofalganganlateralschottkybarrierdiode AT kewei investigationondynamiccharacteristicsofalganganlateralschottkybarrierdiode AT xinyuliu investigationondynamiccharacteristicsofalganganlateralschottkybarrierdiode AT tianchunye investigationondynamiccharacteristicsofalganganlateralschottkybarrierdiode AT zhijin investigationondynamiccharacteristicsofalganganlateralschottkybarrierdiode
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Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode

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