Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode

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Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode

This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured, analyzed with the consideration of acceptor/donor traps in the C-dope...

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Detalles Bibliográficos
Autores principales:	Haitao Zhang, Xuanwu Kang, Yingkui Zheng, Hao Wu, Ke Wei, Xinyu Liu, Tianchun Ye, Zhi Jin
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	GaN SBD Schottky barrier diode simulation current collapse electric field Mechanical engineering and machinery TJ1-1570
Acceso en línea:	https://doaj.org/article/0a7d44ee08d044a8bbe25bae27e14489
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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