Luminescence of porous semiconductor media covered with metallic films
Porous GaP and InP layers with a pore diameter and a skeleton wall thickness of about 50 nm are prepared on bulk substrates by anodization; microgranular ZnO structures are produced by thermal treatment of ZnTe single crystals in this work. The effect of coating in the prepared samples with thin Au,...
Guardado en:
| Autor principal: | |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2016
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/0d6af825e02046b493ccf4c86ce8aa91 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|