Luminescence of porous semiconductor media covered with metallic films
Porous GaP and InP layers with a pore diameter and a skeleton wall thickness of about 50 nm are prepared on bulk substrates by anodization; microgranular ZnO structures are produced by thermal treatment of ZnTe single crystals in this work. The effect of coating in the prepared samples with thin Au,...
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| Format: | article |
| Langue: | EN |
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2016
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| Accès en ligne: | https://doaj.org/article/0d6af825e02046b493ccf4c86ce8aa91 |
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