Luminescence of porous semiconductor media covered with metallic films
Porous GaP and InP layers with a pore diameter and a skeleton wall thickness of about 50 nm are prepared on bulk substrates by anodization; microgranular ZnO structures are produced by thermal treatment of ZnTe single crystals in this work. The effect of coating in the prepared samples with thin Au,...
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| Formato: | article |
| Lenguaje: | EN |
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2016
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/0d6af825e02046b493ccf4c86ce8aa91 |
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| Sumario: | Porous GaP and InP layers with a pore diameter and a skeleton wall thickness of about 50 nm are prepared on bulk substrates by anodization; microgranular ZnO structures are produced by thermal treatment of ZnTe single crystals in this work. The effect of coating in the prepared samples with thin Au, Cu, Ag and ITO films on their luminescence is investigated; the results are discussed in terms of increased energy transfer between the excited electron_hole pairs and surface plasmons where the surface plasmon resonance matches the energy of photoluminescence bands. |
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