Luminescence of porous semiconductor media covered with metallic films

Porous GaP and InP layers with a pore diameter and a skeleton wall thickness of about 50 nm are prepared on bulk substrates by anodization; microgranular ZnO structures are produced by thermal treatment of ZnTe single crystals in this work. The effect of coating in the prepared samples with thin Au,...

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Autor principal:	Postolache, Vitalie
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2016
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/0d6af825e02046b493ccf4c86ce8aa91
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id	oai:doaj.org-article:0d6af825e02046b493ccf4c86ce8aa91
record_format	dspace
spelling	oai:doaj.org-article:0d6af825e02046b493ccf4c86ce8aa912021-11-21T11:57:23ZLuminescence of porous semiconductor media covered with metallic films535.371+535.3742537-63651810-648Xhttps://doaj.org/article/0d6af825e02046b493ccf4c86ce8aa912016-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2016/article/50385https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Porous GaP and InP layers with a pore diameter and a skeleton wall thickness of about 50 nm are prepared on bulk substrates by anodization; microgranular ZnO structures are produced by thermal treatment of ZnTe single crystals in this work. The effect of coating in the prepared samples with thin Au, Cu, Ag and ITO films on their luminescence is investigated; the results are discussed in terms of increased energy transfer between the excited electron_hole pairs and surface plasmons where the surface plasmon resonance matches the energy of photoluminescence bands. Postolache, VitalieD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 15, Iss 3-4, Pp 176-183 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Postolache, Vitalie Luminescence of porous semiconductor media covered with metallic films
description	Porous GaP and InP layers with a pore diameter and a skeleton wall thickness of about 50 nm are prepared on bulk substrates by anodization; microgranular ZnO structures are produced by thermal treatment of ZnTe single crystals in this work. The effect of coating in the prepared samples with thin Au, Cu, Ag and ITO films on their luminescence is investigated; the results are discussed in terms of increased energy transfer between the excited electron_hole pairs and surface plasmons where the surface plasmon resonance matches the energy of photoluminescence bands.
format	article
author	Postolache, Vitalie
author_facet	Postolache, Vitalie
author_sort	Postolache, Vitalie
title	Luminescence of porous semiconductor media covered with metallic films
title_short	Luminescence of porous semiconductor media covered with metallic films
title_full	Luminescence of porous semiconductor media covered with metallic films
title_fullStr	Luminescence of porous semiconductor media covered with metallic films
title_full_unstemmed	Luminescence of porous semiconductor media covered with metallic films
title_sort	luminescence of porous semiconductor media covered with metallic films
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2016
url	https://doaj.org/article/0d6af825e02046b493ccf4c86ce8aa91
work_keys_str_mv	AT postolachevitalie luminescenceofporoussemiconductormediacoveredwithmetallicfilms
_version_	1718419346183684096

Luminescence of porous semiconductor media covered with metallic films

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