1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse <italic>p-n</italic> Junction Termination

1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse <italic>p-n</italic> Junction Termination

In this paper, we demonstrate high-performance quasi-vertical GaN-on-Sapphire Schottky barrier diodes (SBD) with a reverse GaN <italic>p-n</italic> junction termination (RPN). The SBD has a current output of 1 kA/cm<sup>2</sup> at <inline-formula> <tex-math notation=...

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Enregistré dans:
Détails bibliographiques
Auteurs principaux: Ru Xu, Peng Chen, Menghan Liu, Jing Zhou, Yunfei Yang, Yimeng Li, Cheng Ge, Haocheng Peng, Bin Liu, Dunjun Chen, Zili Xie, Rong Zhang, Youdou Zheng
Format: article
Langue:EN
Publié: IEEE 2020
Sujets:
Vertical GaN-on-Sapphire Schottky barrier diode
reverse <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">p-n</italic> GaN junction
breakdown voltage
power FOM
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Accès en ligne:https://doaj.org/article/0db05b613b094be8ae88b2bfb892336f
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https://doaj.org/article/0db05b613b094be8ae88b2bfb892336f

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