1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse <italic>p-n</italic> Junction Termination
In this paper, we demonstrate high-performance quasi-vertical GaN-on-Sapphire Schottky barrier diodes (SBD) with a reverse GaN <italic>p-n</italic> junction termination (RPN). The SBD has a current output of 1 kA/cm<sup>2</sup> at <inline-formula> <tex-math notation=...
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2020
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oai:doaj.org-article:0db05b613b094be8ae88b2bfb892336f2021-11-20T00:00:28Z1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse <italic>p-n</italic> Junction Termination2168-673410.1109/JEDS.2020.2980759https://doaj.org/article/0db05b613b094be8ae88b2bfb892336f2020-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9044294/https://doaj.org/toc/2168-6734In this paper, we demonstrate high-performance quasi-vertical GaN-on-Sapphire Schottky barrier diodes (SBD) with a reverse GaN <italic>p-n</italic> junction termination (RPN). The SBD has a current output of 1 kA/cm<sup>2</sup> at <inline-formula> <tex-math notation="LaTeX">$V_{F}=2.5$ </tex-math></inline-formula> V, a low <inline-formula> <tex-math notation="LaTeX">$V_{on}$ </tex-math></inline-formula> of 0.66 V ± 0.017 V, a low <inline-formula> <tex-math notation="LaTeX">$R_{on,sp}$ </tex-math></inline-formula> of 1.4 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula>cm<sup>2</sup>, current ON/OFF ratio of over <inline-formula> <tex-math notation="LaTeX">$10^{9}$ </tex-math></inline-formula> (−3 V~3 V). By introducing the RPN, the breakdown voltage can boost from 459 V to 1419 V, and power figure-of-merit (FOM) can reach 1438 MV/cm<sup>2</sup>. It is shown that the presence of the RPN with a suitable anode recess depth can generate an electric field (EF) opposite to the built-in EF at the center of the second top <italic>p-n</italic> junction, which can decrease the EF peak intensity and make the electric field more uniformly distributed inside the device. Finally, the leakage current of the SBD is inhibited and the breakdown voltage is increased.Ru XuPeng ChenMenghan LiuJing ZhouYunfei YangYimeng LiCheng GeHaocheng PengBin LiuDunjun ChenZili XieRong ZhangYoudou ZhengIEEEarticleVertical GaN-on-Sapphire Schottky barrier diodereverse <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">p-n</italic> GaN junctionbreakdown voltagepower FOMElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 8, Pp 316-320 (2020) |
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| collection |
DOAJ |
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EN |
| topic |
Vertical GaN-on-Sapphire Schottky barrier diode reverse <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">p-n</italic> GaN junction breakdown voltage power FOM Electrical engineering. Electronics. Nuclear engineering TK1-9971 |
| spellingShingle |
Vertical GaN-on-Sapphire Schottky barrier diode reverse <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">p-n</italic> GaN junction breakdown voltage power FOM Electrical engineering. Electronics. Nuclear engineering TK1-9971 Ru Xu Peng Chen Menghan Liu Jing Zhou Yunfei Yang Yimeng Li Cheng Ge Haocheng Peng Bin Liu Dunjun Chen Zili Xie Rong Zhang Youdou Zheng 1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse <italic>p-n</italic> Junction Termination |
| description |
In this paper, we demonstrate high-performance quasi-vertical GaN-on-Sapphire Schottky barrier diodes (SBD) with a reverse GaN <italic>p-n</italic> junction termination (RPN). The SBD has a current output of 1 kA/cm<sup>2</sup> at <inline-formula> <tex-math notation="LaTeX">$V_{F}=2.5$ </tex-math></inline-formula> V, a low <inline-formula> <tex-math notation="LaTeX">$V_{on}$ </tex-math></inline-formula> of 0.66 V ± 0.017 V, a low <inline-formula> <tex-math notation="LaTeX">$R_{on,sp}$ </tex-math></inline-formula> of 1.4 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula>cm<sup>2</sup>, current ON/OFF ratio of over <inline-formula> <tex-math notation="LaTeX">$10^{9}$ </tex-math></inline-formula> (−3 V~3 V). By introducing the RPN, the breakdown voltage can boost from 459 V to 1419 V, and power figure-of-merit (FOM) can reach 1438 MV/cm<sup>2</sup>. It is shown that the presence of the RPN with a suitable anode recess depth can generate an electric field (EF) opposite to the built-in EF at the center of the second top <italic>p-n</italic> junction, which can decrease the EF peak intensity and make the electric field more uniformly distributed inside the device. Finally, the leakage current of the SBD is inhibited and the breakdown voltage is increased. |
| format |
article |
| author |
Ru Xu Peng Chen Menghan Liu Jing Zhou Yunfei Yang Yimeng Li Cheng Ge Haocheng Peng Bin Liu Dunjun Chen Zili Xie Rong Zhang Youdou Zheng |
| author_facet |
Ru Xu Peng Chen Menghan Liu Jing Zhou Yunfei Yang Yimeng Li Cheng Ge Haocheng Peng Bin Liu Dunjun Chen Zili Xie Rong Zhang Youdou Zheng |
| author_sort |
Ru Xu |
| title |
1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse <italic>p-n</italic> Junction Termination |
| title_short |
1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse <italic>p-n</italic> Junction Termination |
| title_full |
1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse <italic>p-n</italic> Junction Termination |
| title_fullStr |
1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse <italic>p-n</italic> Junction Termination |
| title_full_unstemmed |
1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse <italic>p-n</italic> Junction Termination |
| title_sort |
1.4-kv quasi-vertical gan schottky barrier diode with reverse <italic>p-n</italic> junction termination |
| publisher |
IEEE |
| publishDate |
2020 |
| url |
https://doaj.org/article/0db05b613b094be8ae88b2bfb892336f |
| work_keys_str_mv |
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