Nanomanufacturing of silicon surface with a single atomic layer precision via mechanochemical reactions
The continued scaling of silicon based electronic devices requires the development of increasingly innovative approaches for high-precision material removal. Here, the authors demonstrate subnanometre depth removal of silicon using scanning probe, shear-induced mechanochemical reactions.
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2018
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/1071abe741d246fea39f12ba76a2af02 |
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| Sumario: | The continued scaling of silicon based electronic devices requires the development of increasingly innovative approaches for high-precision material removal. Here, the authors demonstrate subnanometre depth removal of silicon using scanning probe, shear-induced mechanochemical reactions. |
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