Nanomanufacturing of silicon surface with a single atomic layer precision via mechanochemical reactions

The continued scaling of silicon based electronic devices requires the development of increasingly innovative approaches for high-precision material removal. Here, the authors demonstrate subnanometre depth removal of silicon using scanning probe, shear-induced mechanochemical reactions.

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Autores principales: Lei Chen, Jialin Wen, Peng Zhang, Bingjun Yu, Cheng Chen, Tianbao Ma, Xinchun Lu, Seong H. Kim, Linmao Qian
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/1071abe741d246fea39f12ba76a2af02
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