Characterization of Cu(In,Ga)Se2 thin films using reflected second harmonic generation

A thin film of CuInxGa(1-x)Se2 obtained by physical vapor deposition on a glass substrate covered by a Mo-film has been tested by the second harmonic generation (SHG) technique. The intensity of reflected SHG has been measured as a function of rotation angle around normal to the sample...

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Autores principales: Buiniţkaia, Gohvar, Culiuc, Leonid, Miroviţkii, Vadim, Mishina, E., Şerstiuc, N., Ramanathan, K.
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2011
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Acceso en línea:https://doaj.org/article/12d527ce0784446e9153cab1d5169394
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Sumario:A thin film of CuInxGa(1-x)Se2 obtained by physical vapor deposition on a glass substrate covered by a Mo-film has been tested by the second harmonic generation (SHG) technique. The intensity of reflected SHG has been measured as a function of rotation angle around normal to the sample surface. To reveal the preferential orientation of micro-crystals in the film, using these data, the theoretical model of SHG in a multilayered structure has been developed. In the frame of the proposed model, the Euler angles defining the orientation of optical axis of the film texture, the ratio of two constants of nonlinear susceptibility, and the effective thickness of the film were numerically calculated.