Characterization of Cu(In,Ga)Se2 thin films using reflected second harmonic generation

A thin film of CuInxGa(1-x)Se2 obtained by physical vapor deposition on a glass substrate covered by a Mo-film has been tested by the second harmonic generation (SHG) technique. The intensity of reflected SHG has been measured as a function of rotation angle around normal to the sample...

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Autores principales: Buiniţkaia, Gohvar, Culiuc, Leonid, Miroviţkii, Vadim, Mishina, E., Şerstiuc, N., Ramanathan, K.
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Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2011
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Acceso en línea:https://doaj.org/article/12d527ce0784446e9153cab1d5169394
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spelling oai:doaj.org-article:12d527ce0784446e9153cab1d51693942021-11-21T12:03:02ZCharacterization of Cu(In,Ga)Se2 thin films using reflected second harmonic generation2537-63651810-648Xhttps://doaj.org/article/12d527ce0784446e9153cab1d51693942011-02-01T00:00:00Zhttps://mjps.nanotech.md/archive/2011/article/4314https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365A thin film of CuInxGa(1-x)Se2 obtained by physical vapor deposition on a glass substrate covered by a Mo-film has been tested by the second harmonic generation (SHG) technique. The intensity of reflected SHG has been measured as a function of rotation angle around normal to the sample surface. To reveal the preferential orientation of micro-crystals in the film, using these data, the theoretical model of SHG in a multilayered structure has been developed. In the frame of the proposed model, the Euler angles defining the orientation of optical axis of the film texture, the ratio of two constants of nonlinear susceptibility, and the effective thickness of the film were numerically calculated. Buiniţkaia, GohvarCuliuc, LeonidMiroviţkii, VadimMishina, E.Şerstiuc, N.Ramanathan, K.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 10, Iss 1, Pp 96-102 (2011)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Buiniţkaia, Gohvar
Culiuc, Leonid
Miroviţkii, Vadim
Mishina, E.
Şerstiuc, N.
Ramanathan, K.
Characterization of Cu(In,Ga)Se2 thin films using reflected second harmonic generation
description A thin film of CuInxGa(1-x)Se2 obtained by physical vapor deposition on a glass substrate covered by a Mo-film has been tested by the second harmonic generation (SHG) technique. The intensity of reflected SHG has been measured as a function of rotation angle around normal to the sample surface. To reveal the preferential orientation of micro-crystals in the film, using these data, the theoretical model of SHG in a multilayered structure has been developed. In the frame of the proposed model, the Euler angles defining the orientation of optical axis of the film texture, the ratio of two constants of nonlinear susceptibility, and the effective thickness of the film were numerically calculated.
format article
author Buiniţkaia, Gohvar
Culiuc, Leonid
Miroviţkii, Vadim
Mishina, E.
Şerstiuc, N.
Ramanathan, K.
author_facet Buiniţkaia, Gohvar
Culiuc, Leonid
Miroviţkii, Vadim
Mishina, E.
Şerstiuc, N.
Ramanathan, K.
author_sort Buiniţkaia, Gohvar
title Characterization of Cu(In,Ga)Se2 thin films using reflected second harmonic generation
title_short Characterization of Cu(In,Ga)Se2 thin films using reflected second harmonic generation
title_full Characterization of Cu(In,Ga)Se2 thin films using reflected second harmonic generation
title_fullStr Characterization of Cu(In,Ga)Se2 thin films using reflected second harmonic generation
title_full_unstemmed Characterization of Cu(In,Ga)Se2 thin films using reflected second harmonic generation
title_sort characterization of cu(in,ga)se2 thin films using reflected second harmonic generation
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2011
url https://doaj.org/article/12d527ce0784446e9153cab1d5169394
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