Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS process

Abstract We report on a new route to grow epitaxial copper (Cu) ultra-thin films (up to 150 nm thick) at ambient temperature on Si(001) wafers covered with native oxide without any prior chemical etching or plasma cleaning of the substrate. It consists of a single-step deposition process using high...

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Autores principales: Felipe Cemin, Daniel Lundin, Clarisse Furgeaud, Anny Michel, Guillaume Amiard, Tiberiu Minea, Gregory Abadias
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/15c2bd8e53194e42a5852adb43a589a9
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