Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS process

Abstract We report on a new route to grow epitaxial copper (Cu) ultra-thin films (up to 150 nm thick) at ambient temperature on Si(001) wafers covered with native oxide without any prior chemical etching or plasma cleaning of the substrate. It consists of a single-step deposition process using high...

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Autores principales:	Felipe Cemin, Daniel Lundin, Clarisse Furgeaud, Anny Michel, Guillaume Amiard, Tiberiu Minea, Gregory Abadias
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/15c2bd8e53194e42a5852adb43a589a9
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spelling	oai:doaj.org-article:15c2bd8e53194e42a5852adb43a589a92021-12-02T15:05:12ZEpitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS process10.1038/s41598-017-01755-82045-2322https://doaj.org/article/15c2bd8e53194e42a5852adb43a589a92017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-01755-8https://doaj.org/toc/2045-2322Abstract We report on a new route to grow epitaxial copper (Cu) ultra-thin films (up to 150 nm thick) at ambient temperature on Si(001) wafers covered with native oxide without any prior chemical etching or plasma cleaning of the substrate. It consists of a single-step deposition process using high power impulse magnetron sputtering (HiPIMS) and substrate biasing. For a direct current (DC) substrate bias voltage of −130 V, Cu/Si heteroepitaxial growth is achieved by HiPIMS following the Cu(001) [100]//Si(001) [110] orientation, while under the same average deposition conditions, but using conventional DC magnetron sputtering, polycrystalline Cu films with [111] preferred orientation are deposited. In addition, the intrinsic stress has been measured in situ during growth by real-time monitoring of the wafer curvature. For this particular HiPIMS case, the stress is slightly compressive (−0.1 GPa), but almost fully relaxes after growth is terminated. As a result of epitaxy, the Cu surface morphology exhibits a regular pattern consisting of square-shaped mounds with a lateral size of typically 150 nm. For all samples, X-ray diffraction pole figures and scanning/transmission electron microscopy reveal the formation of extensive twinning of the Cu {111} planes.Felipe CeminDaniel LundinClarisse FurgeaudAnny MichelGuillaume AmiardTiberiu MineaGregory AbadiasNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Felipe Cemin Daniel Lundin Clarisse Furgeaud Anny Michel Guillaume Amiard Tiberiu Minea Gregory Abadias Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS process
description	Abstract We report on a new route to grow epitaxial copper (Cu) ultra-thin films (up to 150 nm thick) at ambient temperature on Si(001) wafers covered with native oxide without any prior chemical etching or plasma cleaning of the substrate. It consists of a single-step deposition process using high power impulse magnetron sputtering (HiPIMS) and substrate biasing. For a direct current (DC) substrate bias voltage of −130 V, Cu/Si heteroepitaxial growth is achieved by HiPIMS following the Cu(001) [100]//Si(001) [110] orientation, while under the same average deposition conditions, but using conventional DC magnetron sputtering, polycrystalline Cu films with [111] preferred orientation are deposited. In addition, the intrinsic stress has been measured in situ during growth by real-time monitoring of the wafer curvature. For this particular HiPIMS case, the stress is slightly compressive (−0.1 GPa), but almost fully relaxes after growth is terminated. As a result of epitaxy, the Cu surface morphology exhibits a regular pattern consisting of square-shaped mounds with a lateral size of typically 150 nm. For all samples, X-ray diffraction pole figures and scanning/transmission electron microscopy reveal the formation of extensive twinning of the Cu {111} planes.
format	article
author	Felipe Cemin Daniel Lundin Clarisse Furgeaud Anny Michel Guillaume Amiard Tiberiu Minea Gregory Abadias
author_facet	Felipe Cemin Daniel Lundin Clarisse Furgeaud Anny Michel Guillaume Amiard Tiberiu Minea Gregory Abadias
author_sort	Felipe Cemin
title	Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS process
title_short	Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS process
title_full	Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS process
title_fullStr	Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS process
title_full_unstemmed	Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS process
title_sort	epitaxial growth of cu(001) thin films onto si(001) using a single-step hipims process
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/15c2bd8e53194e42a5852adb43a589a9
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Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS process

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