AlGaN-Based 1.55 µm Phototransistor as a Crucial Building Block for Optical Computers
An optically activated, enhancement mode heterostructure field effect transistor is proposed and analytically studied. A particular feature of this device is its gate region, which is made of a photovoltaic GaN/AlN-based superlattice detector for a wavelength of 1.55 µm. Since the inter-subband tran...
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| Auteurs principaux: | , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
MDPI AG
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/174ff9195f664f5bb2edfabcce176fe6 |
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