A silicon metal-oxide-semiconductor electron spin-orbit qubit

A silicon metal-oxide-semiconductor electron spin-orbit qubit

As the performance of silicon-based qubits has improved, there has been increasing focus on developing designs that are compatible with industrial processes. Here, Jock et al. exploit spin-orbit coupling to demonstrate full, all-electrical control of a metal-oxide-semiconductor electron spin qubit.

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Détails bibliographiques
Auteurs principaux: Ryan M. Jock, N. Tobias Jacobson, Patrick Harvey-Collard, Andrew M. Mounce, Vanita Srinivasa, Dan R. Ward, John Anderson, Ron Manginell, Joel R. Wendt, Martin Rudolph, Tammy Pluym, John King Gamble, Andrew D. Baczewski, Wayne M. Witzel, Malcolm S. Carroll
Format: article
Langue:EN
Publié: Nature Portfolio 2018
Sujets:
Science
Q
Accès en ligne:https://doaj.org/article/17627a10d6ae4946a14c65fb8555a983
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Internet

https://doaj.org/article/17627a10d6ae4946a14c65fb8555a983

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