A silicon metal-oxide-semiconductor electron spin-orbit qubit

A silicon metal-oxide-semiconductor electron spin-orbit qubit

As the performance of silicon-based qubits has improved, there has been increasing focus on developing designs that are compatible with industrial processes. Here, Jock et al. exploit spin-orbit coupling to demonstrate full, all-electrical control of a metal-oxide-semiconductor electron spin qubit.

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Detalles Bibliográficos
Autores principales: Ryan M. Jock, N. Tobias Jacobson, Patrick Harvey-Collard, Andrew M. Mounce, Vanita Srinivasa, Dan R. Ward, John Anderson, Ron Manginell, Joel R. Wendt, Martin Rudolph, Tammy Pluym, John King Gamble, Andrew D. Baczewski, Wayne M. Witzel, Malcolm S. Carroll
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
Science
Q
Acceso en línea:https://doaj.org/article/17627a10d6ae4946a14c65fb8555a983
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