Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors

Anti-Stokes luminescence - the emission of photons with higher energy than those absorbed – in nanomaterials is widely used for optoelectronic applications. Here the authors observe it in degenerately doped bulk InP and GaAs, indicating it as a more general property of direct bandgap semiconductors....

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Autores principales: K. Mergenthaler, N. Anttu, N. Vainorius, M. Aghaeipour, S. Lehmann, M. T. Borgström, L. Samuelson, M.-E. Pistol
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/176b775b11d34ba8b6d055ef7338fa9c
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